© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD18N40ACLB
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint for Increased
Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp
Limits Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching
(UIS) Energy Per Area
• Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (R
G
) and Gate−Emitter Resistor
(R
GE
)
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
Features
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features monolithic circuitry integrating ESD and Over−
Voltage clamped protection for use in inductive coil
drivers applications. Primary uses include Ignition, Direct
Fuel Injection, or wherever high voltage and high current
switching is required.
Description
Rating Symbol Value Unit
Collector−Emitter Voltage
V
CES
430
V
DC
Collector−Gate Voltage
V
CER
430
V
DC
Gate−Emitter Voltage
V
GE
18
V
DC
Collector Current−Continuous
@ TC = 25
°C − Pulsed
I
C
15
50
A
DC
A
AC
ESD (Human Body Model) R = 1500 Ω,
C = 100 pF
ESD 8.0 kV
ESD (Machine Model) R = 0 Ω, C =
200 pF
ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
115
0.77
W
W/°C
Operating and Storage Temperature
Range
T
J
, T
stg
−55 to
+175
°C
Maximum Ratings (TJ = 25°C unless otherwise noted)
NGD18N40ACLB - 18 A, 400 V, N-Channel Ignition IGBT, DPAK
Functional Diagram
Pb
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage
may occur and reliability may be affected.
Additional Information
Samples
Resources
Datasheet
18 Amps, 400 Volts
VCE(on) ≤ 2.0 V @
IC = 10 A, VGE ≥ 4.5 V
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD18N40ACLB
Unclamped Collector−To−Emitter Avalanche Characteristics (−55°≤T
J
≤150°C)
Maximum Short-Circuit Times (−55°≤T
J
≤ 150°C)
Thermal Characteristics
Rating Symbol Value Unit
Short Circuit Withstand Time 1
(See Figure 17, 3 Pulses with 10 ms Period)
t
sc1
750 µs
Short Circuit Withstand Time 2
(See Figure 18, 3 Pulses with 10 ms Period)
t
sc2
5.0 ms
Rating Symbol Value Unit
Thermal Resistance, Junction to Case
R
θ
JC
1. 3
°C/W
Thermal Resistance, Junction to Ambient DPAK (Note 1)
R
θ
JA
95
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
5 seconds
T
L
275 °C
Rating Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, P
k
I
L
= 21.1 A, L = 1.8 mH, Starting T
J
= 25°C
E
AS
400
mJV
CC
= 50 V, V
GE
= 5.0 V, P
k
I
L
= 16.2 A, L = 3.0 mH, Starting T
J
= 25°C 400
V
CC
= 50 V, V
GE
= 5.0 V, P
k
I
L
= 18.3 A, L = 1.8 mH, Starting T
J
= 125°C 300
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, P
k
I
L
= 25.8 A, L = 6.0 mH, Starting T
J
= 25°C E
AS(R)
2000 mJ