R07DS0373EJ0100 Rev.1.00 Page 1 of 3
Apr 26, 2011
Preliminary Datasheet
RJU60C2SDPD
Single Diode
Fast Recovery Diode
Features
• Fast reverse recovery time: t
rr
= 70 ns typ. (at I
F
= 5 A, di/dt = 100 A/μs)
• Low forward voltage: V
F
= 1.4 V typ. (at I
F
= 15 A)
• Low reverse current: I
R
= 1 μA max. (at V
R
= 600 V)
Outline
1
3
2
4
31
2, 4
1. Anode
2. Cathode
3. Anode
4. Cathode
RENESAS Package code: PRSS0004ZJ-A
(
Package name :
TO-252)
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Maximum reverse voltage V
RM
600 V
Average rectified forward curr ent I
o
5 A
Tc = 25°C I
F
15 A Continuous forward current
Tc = 100°C I
F
8 A
Peak surge forward current I
FSM
60 A
Junction to case thermal resistance θj-cd 4.0 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Forward Voltage V
F
⎯ 1.4 2.0 V I
F
= 15 A
Reverse current I
R
⎯ ⎯ 1 μA V
R
= 600 V
Reverse Recovery Time t
rr
⎯ 70 ⎯ ns I
F
= 5 A, di/dt = 100 A/μs
R07DS0373EJ0100
Rev.1.00
A
pr 26, 2011
RJU60C2SDPD Preliminary
R07DS0373EJ0100 Rev.1.00 Page 2 of 3
Apr 26, 2011
Main Characteristics
0.1 1 100010010
10
100
1
0.1
1
10
100
0
0.4 0.8 1.2 1.6
2.0
Ta = 150 °C
25 °C
Ta
= 25°C
0
80
160
40
120
200
40 80 120 160 200
0
I
F
= 5 A
Ta
= 25°C
Forward Voltage V
F
(V)
Forward Current I
F
(A)
Forward Current vs. Forward Voltage (Typical)
di/dt (A/μs)
Reverse Recovery Time t
rr
(ns)
Reverse Recovery Time vs. di/dt (Typical)
Reverse Voltage V
R
(V)
Capaitace Cj (pF)
Capacitance vs. Reverse Voltage (Typical)
100
0.01
1
10
0.1
10 m 100 m100 μ 101
Pulse Width PW (s)
Thermal Impedance θ
j
– c (°C/W)
Thermal Impedance vs. Pulse Width
1 m
Tc = 25°C
Single pulse