ATP Reaffirms Commitment to Long-Term DDR3 Legacy
Memory Module Supply with ATP DDR3 8 Gbit components
As the DRAM market makes a steady migration to DDR4 memory, several key manufacturers have already announced
end-of-life (EOL) production of DDR3 modules based on high density DDR3 8 Gbit components including EOL notice
of the components. However, a sizable number of customers in the networking and embedded industries are still unable
to shift to the latest generation and continue to use legacy systems requiring specific DDR3 memory such as
high-density SO-DIMMs. To avert a supply shortage that could adversely affect these customers’ business operations,
ATP has decided to provide its own DDR3 8 Gbit components for these modules.
ATP-Built from IC to Module
ATP’s own-built DDR3 modules consist of meticulously characterized and tested high-quality integrated circuits (ICs).
The components are manufactured according to ATP’s exacting standards using 2x nm manufacturing process technology
and are tested via an extensive component test program to improve the overall memory module performance.
ATP DDR3 8 Gbit components are free from row hammer effects, thus preventing any disastrous random bit flips caused
by the electrical charge of cells leaking to adjacent cells and successively writing data to them. At module level,
ATP implements 100% test during burn-in (TDBI) into the production flow to guarantee the high quality module.
ATP DDR3 Own Built
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