CCSPG0420N
N-CH GALLIUM NITRIDE
FIELD EFFECT TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CCSPG0420N is an
N-channel gallium nitride field effect transistor designed
for use in power modules and fast-charging power circuit
designs.
MARKING: CSP 0420
CSP2X2 CASE
MAXIMUM RATINGS: (T
J
=25°C) SYMBOL UNITS
Drain-Source Voltage V
DS
40 V
Gate-Source Voltage V
GS
6.0 V
Continuous Drain Current I
D
20 A
Pulsed Drain Current (tp=300μs) I
DM
100 A
Operating and Storage Junction Temperature T
J
, T
stg
-40 to +125 °C
ELECTRICAL CHARACTERISTICS: (T
J
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
GSSR
V
GS
=5.0V, V
DS
=0 30 μA
I
GSSR
V
GS
=6.0V, V
DS
=0 40 μA
I
DSS
V
DS
=40V, V
GS
=0 20 μA
BV
DSS
V
GS
=0, I
D
=500μA 40 V
V
GS(th)
V
GS
= V
DS,
I
D
=1.0mA 0.8 2.4 V
r
DS(ON)
V
GS
=5.0V, I
D
=10A 4.0 4.8 mΩ
C
iss
V
DS
=20V, V
GS
=0, f=1MHz 886.5 pF
C
oss
V
DS
=20V, V
GS
=0, f=1MHz 381.2 pF
C
rss
V
DS
=20V, V
GS
=0, f=1MHz 226.4 pF
Q
g
V
DS
=20V, V
GS
=0 to 5V, I
D
=10A 15.8 nC
Q
gd
V
DS
=20V, V
GS
=0 to 5V, I
D
=10A 8.6 nC
Q
gs
V
DS
=20V, V
GS
=0 to 5V, I
D
=10A 1.9 nC
R2 (10-November 2023)
www.centralsemi.com
CCSPG0420N
N-CH GALLIUM NITRIDE
FIELD EFFECT TRANSISTOR
LEAD CODE:
1a-1e) Drain
2a-2e) Source
3a) NC
3e) Gate
4a-4e) Drain
5a-5e) Source
MARKING:
CSP 0420
!
"!#
##$
CSP2X2 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R2 (10-November 2023)