CM18N50BTP/F
N-Channel 500V (D-S) Power MOSFET
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Description
The CM18N50BTP/F is the N-Channel enhancement
mode power field effect transistors with high cell density,
high voltage planar technology. This high density process
and design have been optimized switching performance
and especially tailored to minimize on-state resistance, .
Features
VDS: 500V
ID (@VGS=10V): 18A
RDS
ON
(@VGS=10V) : < 0.33Ω
High density cell design for extremely low RDS
ON
Excellent on-resistance and DC current capability
Equivalent Circuit and Pin Configuration
Applications
AC/DC load switch
SMPS
LED power
Marking Information
Ordering Information
X=Package type
XXXX = Marking Code
P/N Package Type Packaging Remark
CM18N50BTP TO-220 Tube ROHS
CM18N50BTF TO-220F Tube ROHS
18N50BTX
XXXX
Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)
G
TO-220 TO-220F
Parameter Symbol
Maximum
Unit
CM18N50BTP CM18N50BTF
Drain-source Voltage VDS 500 V
Gate-source Voltage VGS ±30 V
Continuous Drain Current
(1)
Tc=25°C
ID
18 18
(4)
A
Tc=100°C 10.7 10.7
(4)
A
Pulsed Drain Current
(2)
IDM 72 72
(4)
A
Total Power Dissipation
(3)
PD @ Tc=25°C 227 85 W
Derating Factor above 25°C 1.8 0.7
W/°C
Thermal Resistance Junction-to-Case
(3)
RθJC 0.55 1.47 °C/W
Junction and Storage Temperature Range TJ,TSTG -55 to +150 °C
CM18N50BTP/F
N-Channel 500V (D-S) Power MOSFET
Revision_1.0 2 of 6 www.appliedpowermicro.com
Parameter Symbol Conditions Min Typ Max Units
Static Parameter
Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 500
V
Zero Gate Voltage Drain Current IDSS VDS=500V,VGS=0V,TC=25°C
5 μA
Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V
±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2.0
4.0 V
Static Drain-Source on-Resistance RDS(on) VGS=10V,ID=9A
0.27 0.33 Ω
Diode Forward Voltage VSD IS=18A,VGS=0V
0.9 1.2 V
Maximum Body-Diode Continuous Current IS
18 A
Dynamic Parameters
Input Capacitance Ciss
VDS=25V,VGS=0V,f=1MHz
2800
pF
Output Capacitance Coss
251
Reverse Transfer Capacitance Crss
13
Switching Parameters
Total Gate Charge Qg
VDS=400V,ID=18A,VGS=10V
59
nC Gate Source Charge Qgs
12
Gate Drain Charge Qgd
22
Turn-on Delay Time tD(on)
VGS=10V,VDD=50V,
ID=18A,RGEN=25Ω
86
ns
Turn-on Rise Time tr
77
Turn-off Delay Time tD(off)
188
Turn-off Fall Time tf
82
Electrical Characteristics (Tc=25 ℃ unless otherwise noted)
Noted: (1) Pulse Test: Pulse Width≤300us,Duty cycle ≤2%
(2) Pulse width limited by maximum junction temperature
(3) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. With 2oz Copper, t≤10s
(4) Drain current limited by maximum junction temperature