eGaN® FET DATASHEET
EPC2306
EPCPOWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2023 | | 1
EPC2306
CYYWWE 123456
EPC2306 – Enhancement Mode Power Transistor
V
DS
, 100 V
R
DS(on)
, 3.8 m max
Applications
• AC-DC chargers, SMPS, adaptors,
power supplies
• High Frequency DC-DC Conversion up
to 80 V input (Buck, Boost, Buck-Boost
and LLC)
• 24 V–60 V Motor Drives
• High Power Density DC-DC modules
from 40 V– 60 V to 5 V–12 V
• Synchronous Rectication
• Solar MPPT
Benets
• Higher Eciency – Lower conduction
and switching losses, zero reverse
recovery losses
• Ultra Small Footprint – Higher power
density
EFFICIENT POWER CONVERSION
HAL
G
D
S
Gallium Nitride’s exceptionally high electron mobility and low temperature coecient allows very low
R
DS(on)
, while its lateral device structure and majority carrier diode provide exceptionally low Q
G
and zero
Q
RR
. The end result is a device that can handle tasks where very high switching frequency, and low on-
time are benecial as well as those where on-state losses dominate.
Application Notes:
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical,
OFF = 0 V (negative voltage not needed)
• Top of FET is electrically connected to source
Static Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BV
DSS
Drain-to-Source Voltage V
GS
= 0 V, I
D
= [TBD] 100 V
I
DSS
Drain-Source Leakage V
GS
= 0 V, V
DS
= 80 V 0.5
μA
I
GSS
Gate-to-Source Forward Leakage V
GS
= 5 V 0.005 1.9
mAGate-to-Source Forward Leakage
#
V
GS
= 5 V, T
J
= 125°C 0.2 4.2
Gate-to-Source Reverse Leakage V
GS
= -4 V 0.005
V
GS(TH)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 7 mA 0.8 1.3 2.5 V
R
DS(on)
Drain-Source On Resistance V
GS
= 5 V, I
D
= 25 A 3.0 3.8 mΩ
V
SD
Source-Drain Forward Voltage
#
I
S
= 0.5 A, V
GS
= 0 V 1.6 V
Maximum Ratings
PARAMETER VALUE UNIT
V
DS
Drain-to-Source Voltage (Continuous) 100
V
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120
I
D
Continuous (T
A
= 25°C) 48
A
Pulsed (25°C, T
PULSE
= 300 µs) 197
V
GS
Gate-to-Source Voltage 6
V
Gate-to-Source Voltage -4
T
J
Operating Temperature -40 to 150
°C
T
STG
Storage Temperature -40 to 150
# Dened by design. Not subject to production test.
PRELIMINARY
EPC2306
Package size: 3 x 5 mm
Thermal Characteristics
PARAMETER TYP UNIT
R
θJC
Thermal Resistance, Junction-to-Case (Case TOP)
0.5
°C/W
R
θJB
Thermal Resistance, Junction-to-Board (Case BOTTOM)
3.0
R
θJA_JEDEC
Thermal Resistance, Junction-to-Ambient (using JEDEC 51-2 PCB)
54
R
θJA_EVB
Thermal Resistance, Junction-to-Ambient (using EPC90145 EVB)
23
Scan QR code or click link below for more
information including reliability reports,
device models, demo boards!
https://l.ead.me/EPC2306
Questions:
EPC GaN Talk
Support Forum
eGaN® FET DATASHEET
EPC2306
EPCPOWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2023 | | 2
Dynamic Characteristics
#
(T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
C
ISS
Input Capacitance
V
DS
= 50 V, V
GS
= 0 V
1667 2366
pF
C
RSS
Reverse Transfer Capacitance 3.6
C
OSS
Output Capacitance 482 559
C
OSS(ER)
Eective Output Capacitance, Energy Related (Note 1)
V
DS
= 0 to 50 V, V
GS
= 0 V
593
C
OSS(TR)
Eective Output Capacitance, Time Related (Note 2) 767
R
G
Gate Resistance 0.4 Ω
Q
G
Total Gate Charge V
DS
= 50 V, V
GS
= 5 V, I
D
= 25 A 11.6 16.3
nC
Q
GS
Gate to Source Charge
V
DS
= 50 V, I
D
= 25 A
4.1
Q
GD
Gate-to-Drain Charge 0.8
Q
G(TH)
Gate Charge at Threshold 3
Q
OSS
Output Charge V
DS
= 50 V, V
GS
= 0 V 38 47
Q
RR
Source-Drain Recovery Charge
0
All measurements were done with substrate shorted to source.
# Dened by design. Not subject to production test.
Note 1: C
OSS(ER)
is a xed capacitance that gives the same stored energy as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.
Note 2: C
OSS(TR)
is a xed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
– Drain Current (A)
Figure 1: Typical Output Characteristics at 25°C
V
DS
– Drain-to-Source Voltage (V)
V
GS
= 5 V
V
GS
= 4 V
V
GS
= 3 V
V
GS
= 2 V
R
DS(on)
– Drain-to-Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
3.0 3.5 2.0 2.5 4.0 4.5 5.0
Figure 3: Typical R
DS(on)
vs. V
GS
for Various Drain Currents
I
D
= 12.5 A
I
D
= 25.0 A
I
D
= 37.5 A
I
D
= 50.0 A
20
15
10
5
0
1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 2: Typical Transfer Characteristics
25˚C
125˚C
V
DS
= 3 V
V
GS
– Gate-to-Source Voltage (V)
1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
25˚C
125˚C
V
DS
= 3 V
150
100
50
0
I
D
– Drain Current (A)
3.0
3.5
2.0
2.5 4.0 4.5 5.0
Figure 4: Typical R
DS(on)
vs. V
GS
for Various Temperatures
25˚C
125˚C
I
D
= 25 A
R
DS(on)
– Drain-to-Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
20
15
10
5
0