eGaN® FET DATASHEET
EPC7014
EPCPOWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2023 | For more information: info@epc-co.com | 1
EPC7014 – Rad Hard Power Transistor
V
DS
, 60 V
R
DS(on)
, 340 mΩ
I
D
, 4 A pulse
95% Pb / 5% Sn solder
Die size: 0.9 x 0.9 mm
EPC7014 eGaN® FETs are supplied only in
passivated die form with solder bumps.
Applications
• Commercial satellite EPS & avionics
• Deep space probes
• High frequency Rad Hard DC-DC conversion
• Rad Hard motor drives
Features
• Ultra high eciency
• Ultra low Q
G
• Ultra small footprint
• Light weight
• Total dose
– Rated > 1 Mrad
• Single event
– SEE immunity for LET of 85 MeV/(mg/cm
2
)
with V
DS
up to 100% of rated breakdown
• Neutron
– Maintains Pre-Rad specication for
up to 3 x 10
15
Neutrons/cm
2
EFFICIENT POWER CONVERSION
G
D
S
Maximum Ratings
PARAMETER VALUE UNIT
V
DS
Drain-to-Source Voltage (Continuous) 60
V
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 72
I
D
Continuous (T
A
= 25°C) 2.4
A
Pulsed (25°C, T
PULSE
= 300 µs) 4
V
GS
Gate-to-Source Voltage 6
V
Gate-to-Source Voltage -4
T
J
Operating Temperature -55 to 150
°C
T
STG
Storage Temperature -55 to 150
Thermal Characteristics
PARAMETER TYP UNIT
R
θJC
Thermal Resistance, Junction-to-Case 7.1
°C/W R
θJB
Thermal Resistance, Junction-to-Board 25
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1) 104
Static Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BV
DSS
Drain-to-Source Voltage V
GS
= 0 V, I
D
= 0.1 mA 60 V
I
DSS
Drain-Source Leakage V
GS
= 0 V, V
DS
= 60 V 0.0001 0.1 mA
I
GSS
Gate-to-Source Forward Leakage V
GS
= 5 V 0.001 0.5
mAGate-to-Source Forward Leakage
#
V
GS
= 5 V, T
J
= 125˚C 0.05 1
Gate-to-Source Reverse Leakage
#
V
GS
= -3 V 0.05 1.1
V
GS(TH)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 0.14 mA 0.8 1.6 2.5 V
R
DS(on)
Drain-Source On Resistance V
GS
= 5 V, I
D
= 0.50 A 240 340 mΩ
V
SD
Source-Drain Forward Voltage
#
I
S
= 0.1 A, V
GS
= 0 V 1.9 V
Note 1: R
θJA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
All measurements were done with substrate connected to source.
# Dened by design. Not subject to production test.
Rad Hard eGaN® transistors have been specically designed for critical applications in the high reliability or
commercial satellite space environments. GaN transistors oer superior reliability performance in a space
environment because there are no minority carriers for single event, and as a wide band semiconductor
there is less displacement for protons and neutrons, and additionally there is no oxide to breakdown.
These devices have exceptionally high electron mobility and a low temperature coecient resulting in
very low R
DS(on)
values. The lateral structure of the die provides for very low gate charge (Q
G
) and extremely
fast switching times. These features enable faster power supply switching frequencies resulting in higher
power densities, higher eciencies and more compact designs.
EPC7014
eGaN® FET DATASHEET
EPCPOWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2023 | For more information: info@epc-co.com | 2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
– Drain Current (A)
Figure 1: Typical Output Characteristics at 25°C
V
DS
– Drain-to-Source Voltage (V)
V
GS
= 5 V
V
GS
= 4 V
V
GS
= 3 V
V
GS
= 2 V
R
DS(on)
– Drain-to-Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
2.5 3.0 3.5 4.0 4.5 5.0
Figure 3: R
DS(on)
vs. V
GS
for Various Drain Currents
I
D
= 0.2 A
I
D
= 0.5 A
I
D
= 0.8 A
I
D
= 1.0 A
800
600
400
200
0
V
GS
– Gate-to-Source Voltage (V)
1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 2: Transfer Characteristics
25˚C
125˚C
V
DS
= 3 V
I
D
– Drain Current (A)
1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 2: Transfer Characteristics
25°C
125°C
V
DS
= 3 V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.5 3.0 3.5 4.0 4.5 5.0
Figure 4: R
DS(on)
vs. V
GS
for Various Temperatures
25°C
125°C
I
D
= 0.5 A
R
DS(on)
– Drain-to-Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
800
600
400
200
0
Dynamic Characteristics
#
(T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
C
ISS
Input Capacitance
V
DS
= 30 V, V
GS
= 0 V
16 22
pF
C
RSS
Reverse Transfer Capacitance
0.1
C
OSS
Output Capacitance
17 26
C
OSS(ER)
Eective Output Capacitance, Energy Related (Note 2)
V
DS
= 0 to 30 V, V
GS
= 0 V
21
C
OSS(TR)
Eective Output Capacitance, Time Related (Note 3)
26
R
G
Gate Resistance
12.6 Ω
Q
G
Total Gate Charge
V
DS
= 30 V, V
GS
= 5 V, I
D
= 0.5 A 142 184
pC
Q
GS
Gate-to-Source Charge
V
DS
= 30 V, I
D
= 0.5 A
43
Q
GD
Gate-to-Drain Charge
25
Q
G(TH)
Gate Charge at Threshold
35
Q
OSS
Output Charge
V
DS
= 30 V, V
GS
= 0 V 764 1146
Q
RR
Source-Drain Recovery Charge
0
# Dened by design. Not subject to production test.
Note 2: C
OSS(ER)
is a xed capacitance that gives the same stored energy as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.
Note 3: C
OSS(TR)
is a xed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.