MUR860L
1 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1984
Rev.1.3,28-Oct-22
Ultra-Fast Recovery Diodes 8A FRED
Features
● Adopt FRED chip
● Low forward Voltage drop
● Fast reverse recovery time
● High frequency operation
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
P
ackage: TO-220AC
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
■
Maximum Ratings
(T
j
=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
MUR860L
Device marking code
MUR860L
Repetitive Peak Reverse Voltage
V
RRM
V 600
Average Rectified Output Current
@60Hz sine wave, R-load, T
c
(FIG.1)
I
O
A
8
Surge(Non-repetitive)Forward Current
@60H
z
half sine-wave, 1 cycle, T
j
=25℃
I
FSM
A
50
Current Squared Time @1ms≤t≤8.3ms
Tj=25℃，
I
2
t
A
2
s
12.5
Storage Temperature
T
stg
℃
-55 ~ +175
Junction Temperature
T
j
℃
-55 ~ +175
Typical Junction capacitance @4V,1MHz
Cj
pF
42
COMPLIANT
RoHS
MUR860L
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1984
Rev.1.3,28-Oct-22
■Electrical Characteristics
PARAMETER SYMBOL
UNIT TEST CONDITIONS
Min Typ Max
Instantaneous forward voltage drop per diode
V
FM
V
I
FM
=8.0A @Tj=25℃
- 2.15 3.0
I
FM
=8.0A @Tj=150℃
- -
2.0
DC reverse current at
rated DC blocking voltage per diode
I
RRM1
uA
VRM=VRRM
Tj=25℃
- - 5.0
I
RRM2
VRM=VRRM
Tj=150℃
- 25 200
Reverse Recovery Time Trr
ns
IF=0.5A IRM=1A
IRR=0.25A Tj=25℃
- 17 25
Tj=25℃
IF=8A
di/dt=-200A/us
VRM=200V
- 40 -
Tj=125℃
- 95 -
Peak recovery current I
RRM
A
Tj=25℃
- 1.9 -
Tj=125℃
- 3.8 -
Reverse recovery charge Qrr
nC
Tj=25℃
- 40 -
Tj=125℃
- 185 -
■
Thermal Characteristics （T
j
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
MUR860L
Thermal Resistance Between junction and case
R
θJ-C
℃/W
2.0
Thermal Resistance Between junction and Air
R
θJ-A
℃/W
50
■
Ordering Information (Example)
PREFERED P/N UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MUR860L
Approximate 1.8 50 1000 5000 Tube
■
Characteristics (Typical)
1 2 5 10 20 50 100
30
40
50
60
8.3ms Single
Half Sine-Wave
JEDEC Method
70
20
FIG2:Surge Forward Current Capability
Number of Cycles
Peak Forward Surge Current (A)
10
Case Temperature（℃）
Average Forward Output Current (A)
FIG1:Io -Tc Curve
0
0
50
100
150
2.0
4.0
6.0
8.0
10.0
12.0
14.0
TC measure point
150