MUR8120
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B2935
Rev.1.0,27-Mar-23
Ultra-Fast Recovery Diodes 8A FRED
Features
● Adopt FRED chip
● Low forward Voltage drop
● Fast reverse recovery time
● High frequency operation
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
P
ackage: TO-220AC
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
■
Maximum Ratings
(T
j
=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
MUR8120
Device marking code
MUR8120
Repetitive Peak Reverse Voltage
V
RRM
V 1200
Average Rectified Output Current
@60Hz sine wave, R-load, Tc(FIG.1)
I
O
A
8
Surge(Non-repetitive) Forward Current
@60Hz half sine-wave, 1 cycle, Tj=25℃
I
FSM
A
60
Current Squared Time
@1ms≤t≤8.3ms Tj=25℃
I
2
t
A
2
s
14.94
Storage Temperature
T
stg
℃
-55 ~ +150
Junction Temperature
T
j
℃
-55 ~ +150
Junction capacitance @4V,1MHz
Cj
pF
26
COMPLIANT
RoHS
MUR8120
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B2935
Rev.1.0,27-Mar-23
■Electrical Characteristics
PARAMETER SYMBOL
UNIT TEST CONDITIONS
Min Typ Max
Instantaneous forward voltage drop per diode
V
FM
V
I
FM
=8.0A @Tj=25℃
- 2.00 2.50
I
FM
=8.0A @Tj=125℃
1.70 2.10
DC reverse current at
rated DC blocking voltage per diode
I
RRM1
uA
V
RM
=V
RRM
Tj=25℃
- - 5.0
I
RRM2
V
RM
=V
RRM
Tj=125℃
- - 200
Reverse Recovery Time Trr
ns
I
F
=0.5A I
RM
=1A
I
RR
=0.25A Tj=25℃
- 44 75
Tj=25℃
I
F
=8A
di/dt=-200A/us
V
RM
=400V
- 249 -
Tj=125℃
- 438 -
Peak recovery current I
RRM
A
Tj=25℃
- 5.18 -
Tj=125℃
- 7.32 -
Reverse recovery charge Qrr
nC
Tj=25℃
- 645 -
Tj=125℃
- 1555 -
■
Thermal Characteristics （T
j
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
MUR8120
Thermal Resistance Between junction and case
R
θJ-C
℃/W
0.7
■
Ordering Information (Example)
PREFERED P/N UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MUR8120
Approximate 1.88 50 1000 5000 Tube
■
Characteristics (Typical)
12
5
10 20 50 10
0
30
40
50
60
8.3ms Single
Half Sine-Wave
JEDEC Method
70
20
FIG2:Surge Forward Current Capability
Number of Cycles
Peak Forward Surge Current (A)
10
Case Temperature（℃）
Average Forward Output Current (A)
FIG1:Io -Tc Curve
0
0
50
100
150
1.0
2.0
3.0
4.0
5.0
6.0
7.0
200
TC measure point
8.0