V20PW45
www.vishay.com
Vishay General Semiconductor
Revision: 01-Jun-17
1
Document Number: 87673
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.31 V at I
F
= 5 A
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Notes
(1)
With infinite heatsink
(2)
The heat generated must be less than the thermal conductivity from junction to ambient: dP
D
/dT
J
< 1/R
θJA
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
RRM
45 V
I
FSM
200 A
V
F
at I
F
= 20 A (T
A
= 125 °C) 0.46 V
T
J
max. 150 °C
Package SlimDPAK (TO-252AE)
Circuit configuration Single
SlimDPAK (TO-252AE)
TMBS
®
eSMP
®
Series
1
2
K
PIN 1
K
HEATSINK
PIN 2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20PW45 UNIT
Device marking code V20PW45
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum average forward rectified current (Fig. 1) I
F(AV)
(1)
20 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Operating junction temperature range T
J
(2)
-40 to +150 °C
Storage temperature range T
STG
-55 to +150 °C
V20PW45
www.vishay.com
Vishay General Semiconductor
Revision: 01-Jun-17
2
Document Number: 87673
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width ≤ 5 ms
Notes
(1)
The heat generated must be less than thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
θJA
(2)
Free air, mounted on recommended copper pad area; thermal resistance R
θJA
- junction to ambient
(3)
Mounted on infinite heat sink; thermal resistance R
θJM
- junction-to-mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward voltage
I
F
= 5.0 A
T
A
= 25 °C
V
F
(1)
0.42 -
V
I
F
= 10 A 0.46 -
I
F
= 20 A 0.53 0.61
I
F
= 5.0 A
T
A
= 125 °C
0.31 -
I
F
= 10 A 0.37 -
I
F
= 20 A 0.46 0.54
Reverse current V
R
= 45 V
T
A
= 25 °C
I
R
(2)
-1.5
mA
T
A
= 125 °C 13 50
Typical junction capacitance 4.0 V, 1 MHz C
J
3000 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20PW45 UNIT
Typical thermal resistance
R
θJA
(1)(2)
55
°C/W
R
θJM
(3)
1.8
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V20PW45-M3/I 0.20 I 4500 13" diameter plastic tape and reel
V20PW45HM3/I
(1)
0.20 I 4500 13" diameter plastic tape and reel