Revision, 1.2 1 of 4 www.appliedpowermicro.com
Description
The AR3311D3L is a 3.3V bi-directional TVS diode, utiliz-
ing leading monolithic silicon technology to provide fast
response time and low ESD clamping voltage, making
this device an ideal solution for protecting voltage sensi-
tive high-speed data lines. The AR3311D3L has a low
capacitance with a typical value at 1pF, and complies
with the IEC 61000-4-2 (ESD) with ±30kV air and ±30kV
contact discharge. It is assembled into a lead-free SOD-
323 package. The small size, low capacitance and high
ESD surge protection make AR3311D3L an ideal choice
to protect cell phone, wireless systems, and communica-
tion equipment.
Features
180W peak pulse power (8/20μs)
Ultra low capacitance: 1pF typical
Ultra low leakage: nA level
Operating voltage: 3.3V
Low clamping voltage
Protects one power line or data line
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-5 (Lightning) 12A (8/20μs)
RoHS Compliant
AR3311D3L
1-Line Low Capacitance Bi-directional TVS Diode
Part Number Packaging Reel Size
AR3311D3L 3000/Tape & Reel 7 inch
Circuit and Pin Schematic
Dimensions and Pin Configuration
Mechanical Characteristics
Package: SOD-323
Lead Finish: Matte Tin
Case Material: “Green” Molding Compound.
Terminal Connections: See Diagram Below
Marking Information: See Below
Applications
USB Ports
Smart Phones
Wireless Systems
Ethernet 10/100/1000 Base T
Marking Information
Ordering Information
1
2
R2
CC
Revision, 1.2 2 of 4 www.appliedpowermicro.com
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter Symbol Value Unit
Peak Pulse Power (8/20µs) Ppk 180 W
Peak Pulse Current (8/20µs) IPP 12 A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±30
±30
kV
Operating Temperature Range TJ −55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Parameter Symbol Min Typ Max Unit Test Condition
Reverse Working Voltage VRWM 3.3 V
Breakdown Voltage VBR 3.8 V IT = 1mA
Reverse Leakage Current I
R
0.2 µA VT=VRWM
Clamping Voltage VC 7 V IPP = 1A (8 x 20µs pulse)
Clamping Voltage VC 15 V IPP = 12A (8 x 20µs pulse)
Junction Capacitance CJ 1 pF VR = 0V, f = 1MHz
AR3311D3L