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Description
The AR0521D5 is a bi-directional TVS diode, utilizing
leading monolithic silicon technology to provide fast re-
sponse time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive
high-speed data lines. The AR0521D5 has an ultra-low
capacitance with a typical value at 0.3pF, and complies
with the IEC 61000-4-2 (ESD) with ±25kV air and ±22kV
contact discharge. It is assembled into a SOD-523 lead-
free package. The small size, ultra-low capacitance and
high ESD surge protection make AR0521D5 an ideal
choice to protect cell phone, digital visual interfaces and
other high speed ports.
Features
Ultra low capacitance: 0.3pF typical
Ultra low leakage: nA level
Operating voltage: 5V
Low clamping voltage
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±25kV
Contact discharge: ±22kV
– IEC61000-4-5 (Lightning) 4A (8/20μs)
RoHS Compliant
AR0521D5
1-Line Ultra Low Capacitance Bi-directional TVS Diode
Part Number Packaging Reel Size
AR0521D5 3000/Tape & Reel 7 inch
Dimensions and Pin Configuration
Mechanical Characteristics
Package: SOD-523
Lead Finish: Matte Tin
Case Material: “Green” Molding Compound.
Terminal Connections: See Diagram Below
Marking Information: See Below
Applications
Cellular Handsets and Accessories
Display Ports
MDDI Ports
USB Ports
Digital Visual Interface (DVI)
PCI Express and Serial SATA Ports
Marking Information
Ordering Information
25= Device Marking Code
Circuit and Pin Schematic
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Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter Symbol Value Unit
Peak Pulse Power (8/20µs) Ppk 100 W
Peak Pulse Current (8/20µs) IPP 4 A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±25
±22
kV
Operating Temperature Range TJ −55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Parameter Symbol Min Typ Max Unit Test Condition
Reverse Working Voltage VRWM 5 V
Breakdown Voltage VBR 6.5 9.5 V IT = 1mA
Reverse Leakage Current I
R
0.02 0.2 μA VRWM = 5V
Clamping Voltage VC 12 V IPP = 1A (8 x 20µs pulse)
Clamping Voltage VC 25 V IPP = 4A (8 x 20µs pulse)
Junction Capacitance CJ 0.3 0.5 pF VR = 0V, f = 1MHz
AR0521D5