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Description

The AR0511P6 is a 5V bi-directional TVS diode, utilizing

leading monolithic silicon technology to provide fast re-

sponse time and low ESD clamping voltage, making this

device an ideal solution for protecting voltage sensitive

high-speed data lines. The AR0511P6 has a low capaci-

tance with a typical value at 1pF, and complies with the

IEC 61000-4-2 (ESD) with ±30kV air and ±30kV contact

discharge. It is assembled into a lead-free DFN1610-2

package. The small size, low capacitance and high ESD

surge protection make AR0511P6 an ideal choice to pro-

tect cell phone, wireless systems, and communication

equipment.

Features

 360W peak pulse power (8/20μs)

 Ultra low capacitance: 1pF typical

 Ultra low leakage: nA level

 Operating voltage: 5V

 Low clamping voltage

 Protects one power line or data line

 Complies with following standards:

– IEC 61000-4-2 (ESD) immunity test

Air discharge: ±30kV

Contact discharge: ±30kV

– IEC61000-4-5 (Lightning) 18A (8/20μs)

 RoHS Compliant

AR0511P6

1-Line Low Capacitance Bi-directional TVS Diode

Part Number Packaging Reel Size

AR0511P6 3000/Tape & Reel 7 inch

Circuit and Pin Schematic

Dimensions and Pin Configuration

Mechanical Characteristics

 Package: DFN1610-2

 Lead Finish: Matte Tin

 Case Material: “Green” Molding Compound.

 Terminal Connections: See Diagram Below

 Marking Information: See Below

Applications

 USB Ports

 Smart Phones

 Wireless Systems

 Ethernet 10/100/1000 Base T

Marking Information

51P: Device Marking Code

Ordering Information

1.0

1.6

0.5

51P

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Absolute Maximum Ratings (T

=25°C unless otherwise specified)

Electrical Characteristics (T

=25°C unless otherwise specified)

Parameter Symbol Value Unit

Peak Pulse Power (8/20µs) Ppk 360 W

Peak Pulse Current (8/20µs) IPP 18 A

ESD per IEC 61000−4−2 (Air)

ESD per IEC 61000−4−2 (Contact)

VESD

±30

Operating Temperature Range TJ −55 to +125 °C

Storage Temperature Range Tstg −55 to +150 °C

Parameter Symbol Min Typ Max Unit Test Condition

Reverse Working Voltage VRWM 5 V

Breakdown Voltage VBR 6 V IT = 1mA

Reverse Leakage Current I

0.2 μA VRWM = 5V

Clamping Voltage VC 10 V IPP = 1A (8 x 20µs pulse)

Clamping Voltage VC 20 V IPP = 18A (8 x 20µs pulse)

Junction Capacitance CJ 1 pF VR = 0V, f = 1MHz

AR0511P6