YINT静电保护元件阵列可保护电子设备免受雷击和静电放电（ESD）等快速瞬态电压的破坏，为输
入/输出接口和数字与模拟信号线提供了理想的保护方案。
Yint的ESD器件封装通常包括：SOD323，SOD523，SOD882，SOD923，SOT23，
SOT553，SOT563，SOT353，SOT363，SOT143，SOT23-6L，SOP-8，and µDFN等。
The array of ESD could preventing electronic equipment from damaging by fast transient voltages
such as lightning and electrostatic discharge (ESD), providing an effective protection solution for
input/output interfaces and digital and analog signal lines.
The packaging of ESD including: SOD323, SOD523, SOD882, SOD923, SOT23, SOT553, SOT563,
SOT353, SOT363, SOT143, SOT23-6L, SOP-8, μDFN, etc.
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静电保护元件 ESD （Electrostatic Discharge Devices）
特点 Features
ElectroStatic Discharge Devices静电保护元件
Some of the applications discussed in this guide are:
响应速度快 Fast response time
小尺寸封装 Small package size
低钳位电压 Low clamping voltage
低漏电流 Low leakage current
YINT可提供三种类型的ESD器件：标准电容（大于100pf）,低电容（5-100pF）,超低电容（小于5pf）
YINT offers three types of TVS Diode Arrays: Standard Capacitance(more than 100pF), Low Capacitance
(5-100pF), Ultra Low Capacitance(less than 5pF)
符合IEC 61000-4-2(ESD) : Air 15KV , Contact 8KV
Compatible with IEC 61000-4-2(ESD) : Air 15KV , Contact 8KV
USB1.1/2.0/3.0
HDMI
DisplayPort
DVI
10/100/1000 Ethernet
eSATA
RS-232
RS-485
CAN Bus
Keypad/Push button
LCD/Camera display interfaces
1394a/b
LVDS
Audio (Speaker/Microphone)
Analog Video
SIM Sockets
39
音特电子
YINT ELECTRONIC
静电保护元件ElectroStatic Discharge Devices
PC’s
Portable Medical Devices
Set Top Boxes
LCD/PDP
Portable Navigation Devices
SIM/SD Cards
External Storage
Switches/Routers
Smart Phone
Keyboards/Mouse
Mobile Handsets
MP3/PMP’s
PDA’s
Digital Cameras
Many of these applications can be found in electronic devices such as:
Definitions and Terms
Reverse Standoff Voltage(VRWM)
The VRWM of ESD should be equal to, or greater than the peak operating
voltage of circit(or part of the circuit)to be protected.This is to ensure the
normal operation of circuit will not be affected.
Clamp Voltage(VC)
Maximum voltage which can be measured across the protector when
subjected to the maximum peak pulse current
反向关断电压（V
RWM）
ESD的VRWM必须大于或者等于被保护电路（或者被保护电路一
部分）的峰值操作电压，这是为了确保ESD器件不影响电路的正
常工作。
钳位电压（VC）
当受到最大的浪涌电流冲击时，保护器件两端测量到的最大电压
Reverse breakdown Voltage(V
BR) 反向击穿电压(VBR)
Reverse Leakage Current(IR)
Maximum of state current measured at specified voltage
反向漏电流（IR）
在额定电压下最大的漏电流
Junction Capacitance （C）
VR=0V, f = 1MHz Between I/0 pins or Any I/O pin to ground
结电容（C）
I/O pin之间或I/O pin与地之间的寄生电容
术语定义
ESD
40
SOD323
静电保护元件 ElectroStatic Discharge Devices
Part number
VRWM IR (μA) VBR (V)
(V) @ VRWM @ IT
IT(mA)
VC（V）
@IPP=1A
Ppk
(W)
C
(pF)
PACKAGE
ESD3V3D3 3.3 10 5 6.5 350 500
ESD5V0D3 5 10 6 9.8 350 350
ESD8V0D3 8 10 8.5 13.4 350 150
ESD12VD3 12 1 13.3 19 350 120
ESD15VD3 15 1 16.7 24 350 100
ESD24VD3 24 1 26.7 43 350 80
ESD36VD3 36 1 40 60 350 30
1 SOD-323
Part number
VRWM IR (μA) VBR (V)
(V) @ VRWM @ IT
IT(mA)
VC（V）
@IPP=1A
Ppk
(W)
C
(pF)
PACKAGE
ESD3V3D3B 3.3 200 4 7 320 350
ESD5V0D3B 5 10 6 9.8 320 260
ESD8V0D3B 8 5 8.5 13.4 320 120
ESD12VD3B 12 1 13.3 19 320 110
ESD15VD3B 15 1 16.7 24 320 100
ESD24VD3B 24 1 26.7 43 320 75
ESD36VD3B 36 1 40 60 320 35
1 SOD-323
1 2