Preliminary 860-930 MHz RF Front-End Module
www.geochipinc.com Geo-chip All Rights Reserved Rev0.2 | Page 1 / 10
Data Sheet
GC1109
Features
Integrated PA with +30 dBm output
power
Integrated LNA with noise figure of
2dB, typical
Alternate TX input pin simplifies
connection to any SoC
Transmit bypass path with low loss:
< 1.0 dB
Single-ended 50 Ω input and output
ports
Fast turn-on/turn-off time: < 2 μs Rx
mode and < 4 μs Tx mode
Supply voltage on VCC up to 4V
Sleep mode current: < 1 μA
MCM (16-pin, 3.0 x 3.0 x 0.75 mm)
NiPdAu plated package
Applications
LP-WAN devices
Internet of Things
Smart meters
Industrial applications
Range extender
Product Highlights
High output power
Integrated PA output match
Description
The GEO chip GC1109 is a high-performance,
highly integrated RF front-end module designed for
high-power Industrial, Scientific, Medical (ISM)
band applications operating in the 860 to 930 MHz
frequency range.
The GC1109 is designed for ease of use and
maximum flexibility with fully matched 50 Ω TX and
RX inputs and antenna outputs, and digital controls
compatible with 1.2 to 3.6 V CMOS levels.
The GC1109 is packaged in a 16-pin, 3.0 x 3.0 x
0.75 mm Multi-Chip Module (MCM) package.
Geo-chip Green products are
compliant with all applicable
legislation and are halogen-free.
TX
RX
TX_ALT
PA
_OUT
LNA
_IN
RX
_FLT
TX
_IN
ANT
PA
LNA
Logic Control
CPS
CTX
CSD
Output
Match
Figure 1. GC1109 Block Diagram
Data Sheet
Preliminary
GC1109
www.geochipinc.com Geo-chip All Rights Reserved Rev0.2 | Page 2 / 10
Table1.Pin Description
Name
Pin
TX
1
RX
2
TX_ALT
3
CSD
4
CPS
5
CTX
6
LNA_IN
7
RX_FLT
8
ANT
9
GND
10
TX_IN
11
GND
12
PA_OUT
13
N/C
14
VBAT
15
VCC
16
Paddle
17
Table 2. Absolute Maximum Ratings
Parameters
Symbol
Minimum
Maximum
Unit
Tx input power at TX port
PIN_TX_MAX
+10
dBm
TX input power at TX port (bypass
mode)
PIN_TX_BYP_MAX
+20
dBm
Rx input power at ANT port
PIN_RX_MAX
+10
dBm
Supply voltage on VBAT (no RF)
VBAT
2.8
4.6
Volts
Supply voltage on VCC (no RF)
VCC
-0.3
4.2
Volts
Operating Temperature
Tcase
-40
85
Storage Temperature
Tstg
-40
125
ESD (HBM)
+3000
Volts
ESD (CDM)
+500
Volts
Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here
may result in permanent damage to the device.
Table 3. Recommended Operating Condition
Parameters
Symbol
Minimum
Nominal
Maximum
Unit
Operating Frequency
F
860
930
MHz
Supply Voltage on VBAT
VBAT
2.8
3.3
4.2
Volts
Supply Voltage on VCC
VCC
0.5
3.3
4
Volts
Mode Control Voltage High
VMODE_High
1.2
3.6
Volts
Mode Control Voltage Low
VMODE_Low
0
0.3
Volts
Operating Temperature
Tcase
-40
+25
+85
Note: 1. CSD/CPS/CTX voltage level must not exceed VBAT voltage.
2. VBAT must be prior to CSD/CPS/CTX for the power on sequence.
TX
RX
TX_ALT
CSD
VCC VBAT
N/C PA_OUT
CPS CTX
LNA_IN RX_FLT
GND
TX_IN
GND
ANT
1
2
3
4
5 6 7 8
9
10
11
12
13141516
GND
Figure 2.GC1109 Pinout (Top view)