RF FAMILY OF PRODUCTS

Core innovations for differentiated RF systems

renesas.com/rf

RF INNOVATIONS FOR TACKLING COMMON

DESIGN CHALLENGES

Renesas is a leader in developing circuit-level RF innovations and is a trusted supplier to the leading communications systems

providers. We use the Smart Silicon™ approach to leverage the best technologies to create a portfolio of differentiated

RF products.

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Circuit–level innovations – Improved system-level performance and repeatability with lower power consumption and increased reliability

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Innovation through Smart Silicon™ – Unique product solutions using optimal process technology to achieve the best performance from SOI, GaAS,

GaN, or SiGe

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Trusted partner – Technology supplier to world’s leading communication system providers and deployed in global networks

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Established product portfolio – Broad portfolio with a proven history of reliability ranging from simple, single-function components to complex RF

sub-systems

Glitch-Free

Constant

High Linearity

FlatNoise

™

Zero-Distortion

™

Glitch–Free™ Technology

Renesas’ digital step attenuators (DSA) virtually eliminate transient overshoot that occurs during MSB attenuation

state transitions of standard DSAs. With Glitch–Free technology, amplier damage and loss of information at the ADC

are avoided.

FlatNoise™ Technology

Renesas’ variable gain amplier (VGA) noise gure is kept virtually at in the critical region, while gain is reduced.

This greatly eases design constraints for radio engineers by enhancing signal–to–noise ratio (SNR).

Zero–Distortion™ Technology

Renesas’ RF ampliers and RF mixers improve SNR by reducing the noise oor and third order intermodulation

distortion. This is important for crowded spectrum environments, as it enhances quality-of-service (QoS) and

frees up under–utilized spectrum.

LIN

Constant Linearity Technology

Renesas’ variable gain ampliers maintain constant high linearity as gain is adjusted. As the gain is reduced, the

linearity (OIP3) remains constant in the critical region. This prevents intermodulation distortion from degrading as the

gain is reduced.

|Z|

Constant Impedance Technology

Renesas’ RF switches maintain nearly constant impedance when switching between RF ports. By controlling the

impedance during the switching process voltage standing wave ratio (VSWR), transients are minimized. This improves

switch reliability, reduces voltage stresses on downstream components, and improves overall system performance.

Constant

Impedance

GAIN

Constant Gain Compensation Technology

Renesas ampliers are able to maintain near constant gain with KGAIN technology that automatically reduces S21

variation over temperature. Allowing temperature dependence to be controlled by design provides better tolerance

and relative immunity to process variation which is particularly ideal for large signal chains.

GAIN

RF Amplifiers

Ampliers are key components for radio cards of various architectures. A versatile high-performance amplier with low-power consumption will be critical

to enabling the design of massive MIMO solutions for 5G wireless systems and other RF applications such as WiFi connectivity, radar and test

and measurement.

Renesas offers RF ampliers with a variety of gain, noise gure and linearity features, in either differential or single-ended input impedances. Our

differentiated interface ampliers feature built-in broadband baluns to support wide band applications with differential inputs and outputs. Some products

feature innovative Zero-Distortion™ technology, enabling high output IP3 with very low current consumption – setting them apart from simple gain

block ampliers.

Driver Ampliers

Part Number Frequency (GHz) Input Output Gain (dB) NF (dB) OP1dB (dBm) OIP3 (dBm) Voltage (V) Current (mA) Package (mm)

F1420 0.7 – 1.1 50Ω SE 50Ω SE 17.4 4.5 23.2 42 5 105 4 x 4, 24–Pin

F1421 1.7 – 2.2 50Ω SE 50Ω SE 20.3 5.5 23 40 5 138 4 x 4, 24–Pin

F1471 0.4 – 4.2 50Ω SE 50Ω SE 17 4.3 28.5 39 5 130 3 x 3, 16–Pin

F1490 1.8 – 5 50Ω SE 50Ω SE 39.5 / 35.5

2.5 24 38 5 75 3 x 3, 16–Pin

F1427 2.3 - 4.2 100Ω DIFF 50Ω SE 35 3.5 28 35 5 140 3 x 3, 16–Pin

Interface Ampliers

Part Number Frequency (GHz) Input Output Gain (dB) NF (dB) OP1dB (dBm) OIP3 (dBm) Voltage (V) Current (mA) Package (mm)

F0424 0.6 – 5.0 50Ω SE 50Ω SE 17 2.3 21 40 3.3 / 5 70 2 x 2, 8–Pin

F1129LB 1.4 – 3.2 50Ω SE 100Ω DIFF 20 1.6 20.5 36 3.3 / 5 61 2 x 2, 12–Pin

F1129MB 3 – 4.2 50Ω SE 100Ω DIFF 19 1.8 18 32 3.3 / 5 60 2 x 2, 12–Pin

F1423 0.6 – 3.0 50Ω DIFF 50Ω SE 13.1 5.1 21.5 41.8 5 120 4 x 4, 24–Pin

F1429LB 1.4 – 3.2 100Ω DIFF 50Ω SE 21.5 1.9 22 40 3.3 / 5 64 2 x 2, 12–Pin

F1429MB 3.0 – 4.2 100Ω DIFF 50Ω SE 21 1.8 21 40 3.3 / 5 73 2 x 2, 12–Pin

Low Noise Ampliers (LNA)

Part Number Frequency (GHz) Gain (dB) NF (dB) OP1dB (dBm) OIP3 (dBm) Voltage (V) Current (mA) Package (mm)

F0109

0.65 – 1 18 0.55

24.5 41 5 120 4 x 4, 16–Pin

F0110

1.5 – 2.3 18.5 0.55

22 39 5 110 4 x 4, 16–Pin

F0111 2.2 – 4.2 18 0.7

23 38 5 90 4 x 4, 16–Pin

Low Noise Ampliers for Satcom / Radar

Part Number Description Frequency (GHz) Gain (dB) NF (dB) OP1dB (dBm) OIP3 (dBm) Voltage (V)

Current

(mA/ch)

Package (mm)

F6921 Dual–ch LNA, Ku–Band SATCOM 10.7 – 12.75 19.5 1.4 –7 2 0.9 – 1.0 13 2.7 x 2.7, 23-BGA

F6922 Dual–ch LNA, Ka–Band SATCOM 17.7 – 21.2 19.5 1.8 –2 10 0.9 – 1.0 16 2.7 x 2.7, 23-BGA

F6923 Dual–ch LNA, Ku / CDL–Band 14 – 17 19.5 1.5 –2 10 0.9 – 1.0 17 2.7 x 2.7, 23-BGA

02–03

Dual gain modes (high gain and low gain settings)

Dual path ampliers specied in a balanced conguration

De-embedded to input pin of input hybrid coupler