Protection IC Datasheet
© 2022 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: FW.12/01/22
LS2405IDD23
24V, 5A Very Low Forward Voltage Diode
The LS2405IDD23 emulates a 5A very low forward voltage diode
that is used in high current diode and diode-OR applications. The
LS2405IDD23 integrates a 35mohm N-Channel MOSFET to obtain
higher efficiency and smaller board area to replace a Schottky
diode. LS2405IDD23 detects the forward voltage drop across the
MOSFET to ensure the current transfer from one path to the other
path smoothly, so it is easily used in the multiple power supplies
OR applications that can effectively increase total system reliability.
When the input supply fails or is shorted to ground, a fast circuitry
can turn off the MOSFET immediately to reduce the reverse
current.
LS2405IDD23 is available in low profile 8 lead DFN 2mmx3mm
package.
Features
RoHS
Pb
Pinout Designation
Description
Applications
1
3
2
AOUT
5
6
IN
DISC
GND
4
EN
7
8
1
3
2
5
6
GND
4
7
8
IN
GND
EXPOSED PAD ON BACKSIDE
OUT
OUT
■ Wide Input Range from 2.7V
to 24V
■ Surge up to 28V
■ Replace a Power Schottky
diode with an Integrated
35mΩ N-Channel MOSFET
■ Fast Turn-off Limits Reverse
Current
■ Smooth Current Transfer
from One Power to the
Other Power
■ Input Supply Rail Discharging
Function
■ Available in 8 lead
2mmx3mm DFN Packages
■ Pb-Free and RoHS Compliant
■ USB PD TypeC Ports
■ Mutil-input power supply
■ Telecom Infrastructure
■ Automotive Systems
Pin Description
Pin
Name
Pin
#
Description
IN 1, 2
Input voltage. Source of the internal N-channel
MOSFET.
GND 3 Ground pin.
DISC 4
Input Discharge control input pin. Set DISC pin logic
Hi to discharge input through an internal 50ohm
resistor to ground. Set DISC pin logic Lo to disable
input discharge. function.
EN 5
Internal N-channel MOSFET Enable pin. EN has
accurate ON/OFF threshold of 1.2V and 1.0V
respectively. Pull it above ON threshold to enable
the MOSFET. Pull it below OFF threshold to disable
the MOSFET, and the LS2405IDD23 only draws
3µA from the AOUT pin. The MOSFET body diode
(IN: Anode; OUT: Cathode) can still conduct current
when EN pin is pull below OFF threshold. To enable
MOSFET all the time, connect EN pin to AOUT pin.
AOUT 6
Supply of the internal circuit. Either connect this pin
to OUT directly or bypass this pin to GND with a 1µF
ceramic capacitor to form a RC hold-up circuit.
OUT 7, 8
Output voltage. Drain of the internal N-channel
MOSFET.
OUT
DRAIN
AOUT
500ohm
Charge
Pump
LDO
Gate
Amp
Fpd
Comp
+
-
+
-
+
-
+
-
GND
IN
25mV
15mV
EN
GND
DISC
50ohm
35mohm
SOURCE
GATE
Functional Block Diagram
Protection IC Datasheet
© 2022 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: FW.12/01/22
LS2405IDD23
24V, 5A Very Low Forward Voltage Diode
Absolute Maximum Rating (Reference to GND)
* Notes:Stress exceeding those listed “Absolute Maximum Ratings” may damage the device.
Symbol Value Units
Supply Voltage IN, OUT, AOUT -0.3 to +28 V
Control Pin EN -0.3 to +28 V
Control Pin DISC -0.3 to +6 V
ESD, Human Body Model (HBM) ±2000 V
Junction Temperature Range -40 to +150 °C
Storage Temperature Range -65 to +150 °C
Lead Temperature (Soldering 10s) 260 °C
Recommend Operating Conditions
Symbol Value Units
Supply Input Voltage, V
IN
+3 to +24 V
Operating Voltage, V
OUT
+2.7 to +24 V
Junction Temperature Range -40 to +125 °C
* Notes: The device is not guaranteed to function outside of the recommended operating conditions.
Symbol Value Units
Maximum Power Dissipation (T
A
=25°C ) 1. 4 W
Thermal Resistance (θ
JA
)
72.11 °C/W
Thermal Resistance (θ
JC
)
30.14 °C/W
Note1: Measured on JESD51-7, 4-Layer PCB.
Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature T
J_MAX
,
the junction to ambient thermal resistance θ
JA
, and the ambient temperature TA. The maximum allowable
continuous power dissipation at any ambient temperature is calculated by P
D_MAX
= (T
J_MAX
-T
A
)/θ
JA
. Exceeding
the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into
thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage.
Thermal information
Symbol Parameter Test Conditions Min Ty p Max Unit
V
IN
Input Voltage Range 2.7 24 V
I
IN
Quiescent Current
V
IN
=5V, V
EN
=5V, I
OUT
=0 300 350 µA
I
AOUT
V
IN
=0V, V
OUT
=V
AOUT
=V
EN
=5V, I
OUT
=0 90 µA
I
STBY
Standby Current
(Intenal MOSFET Disabled)
V
IN
=24V, V
EN
=0V 4 6 µA
V
ENR
EN Turn-on Threshold EN Rising 1. 1 1. 2 1. 3 V
V
ENF
EN Turn-off Threshold EN Falling 0.9 1. 0 1. 1 V
I
EN
EN Internal Pull up Current V
EN
=1.2V 0.1 0.5 µA
V
OUTR
Output UVLO Rising Threshold AOUT=OUT, Output Rising 2.1 2.2 2.3 V
V
OUTF
Output UVLO Falling Threshold AOUT=OUT, Output Falling 1.95 2.05 2.15 V
t
ON
MOSFET Turn-On Time From EN Lo-to-Hi to MOSFET fully On 90 µs
t
OFF
MOSFET Turn-Off Time From V
OUT
-V
IN
>15mV to MOSFET off 300 ns
△VSD
Source-Drain Regulation Voltage I
OUT
=100mA 10 25 40 mV
△V
REV
Source-Drain Reverse Current
Blocking Threshold Voltage
-15 mV
V
DIODE
N-Channel MOSFET Body diode
Forward Voltage Drop
V
IN
=5V, V
EN
=0V, I
OUT
=100mA 0.6 0.8 V
R
DS(ON)
N-Channel MOSFET Ron V
IN
=V
EN
=5V, I
OUT
= 2A 35 mΩ
I
NCH_LKG
N-Channel MOSFET Leakage
Current
V
IN
=V
EN
=0V, V
OUT
=24V, Measure I
IN
1 10 µA
V
HI
DISC Logic Input High 1. 2 V
V
LO
DISC Logic Input Low 0.4 V
R
DPD
DISC Internal Pull Down Resistor 700 1000 1300 kΩ
R
DISC
Input Voltage Discharge Resistor V
IN
=V
DISC
=5V, V
EN
=0V 50 10 0 Ω
Electrical Characteristics (T
A
= +25°C, V
IN
=12V, OUT=AOUT=EN, C
IN
=C
OUT
= 1µF, unless otherwise specified)