eGaN® FET DATASHEET

EPC2307

CYYWWE 123456

EPC2307 – Enhancement Mode Power Transistor

, 200 V

DS(on)

, 10 mΩ max

Applications

• Synchronous Rectication

• AC/DC chargers, SMPS, adaptors

• High Frequency DC-DC Conversion

• Class D audio

• Wireless Power

• High power lidar & dToF

Benets

• Higher Eciency – Lower conduction and

switching losses, zero reverse recovery losses

• Ultra Small Footprint – Higher power density

EFFICIENT POWER CONVERSION

HAL

EPC2307

Package size: 3 x 5 mm

Gallium Nitride’s exceptionally high electron mobility and low temperature coecient allows very

low R

DS(on)

, while its lateral device structure and majority carrier diode provide exceptionally low Q

and zero Q

. The end result is a device that can handle tasks where very high switching frequency,

and low on-time are benecial as well as those where on-state losses dominate.

Application Notes:

• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical,

OFF = 0 V (negative voltage not needed)

• Top of FET is electrically connected to source

Questions:

Static Characteristics (T

= 25°C unless otherwise stated)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

DSS

Drain-to-Source Voltage V

= 0 V, I

= [TBD] 200 V

DSS

Drain-Source Leakage V

= 0 V, V

= 160 V 0.002

GSS

Gate-to-Source Forward Leakage V

= 5 V 0.006

Gate-to-Source Forward Leakage

= 5 V, T

= 125°C 0.4

Gate-to-Source Reverse Leakage V

= -4 V 0.002

GS(TH)

Gate Threshold Voltage V

= V

, I

= 4 mA 0.8 1.1 2.5 V

DS(on)

Drain-Source On Resistance V

= 5 V, I

= 16 A 8.2 10 mΩ

Source-Drain Forward Voltage

= 0.5 A, V

= 0 V 1.6 V

Maximum Ratings

PARAMETER VALUE UNIT

Drain-to-Source Voltage (Continuous) 200

Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 240

Continuous (T

= 25°C) 48

Pulsed (25°C, T

PULSE

= 300 µs) 130

Gate-to-Source Voltage 6

Gate-to-Source Voltage -4

Operating Temperature -40 to 150

°C

STG

Storage Temperature -40 to 150

# Dened by design. Not subject to production test.

PRELIMINARY

Scan QR code or click link below for more

information including reliability reports,

device models, demo boards!

https://l.ead.me/EPC2307

eGaN® FET DATASHEET

EPC2307

Dynamic Characteristics

= 25°C unless otherwise stated)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

ISS

Input Capacitance

= 100 V, V

= 0 V

1401

RSS

Reverse Transfer Capacitance 1.2

OSS

Output Capacitance 326

OSS(ER)

Eective Output Capacitance, Energy Related (Note 1)

= 0 to 100 V, V

= 0 V

445

OSS(TR)

Eective Output Capacitance, Time Related (Note 2) 579

Total Gate Charge V

= 100 V, V

= 5 V, I

= 16 A 10.6

Gate-to-Drain Charge V

= 100 V, I

= 16 A 1.3

OSS

Output Charge V

= 100 V, V

= 0 V 58

Source-Drain Recovery Charge 0

All measurements were done with substrate shorted to source.

# Dened by design. Not subject to production test.

Note 1: C

OSS(ER)

is a xed capacitance that gives the same stored energy as C

OSS

while V

is rising from 0 to 50% BV

DSS

Note 2: C

OSS(TR)

is a xed capacitance that gives the same charging time as C

OSS

while V

is rising from 0 to 50% BV

DSS

120

100

0 1 2 3 4 5 6

– Drain Current (A)

Figure 1: Typical Output Characteristics at 25°C

– Drain-to-Source Voltage (V)

= 5 V

= 4 V

= 3 V

= 2 V

DS(on)

– Drain-to-Source Resistance (mΩ)

– Gate-to-Source Voltage (V)

3.0 3.5 2.0 2.5 4.0 4.5 5.0

Figure 3: Typical R

DS(on)

vs. V

for Various Drain Currents

= 8 A

= 16 A

= 24 A

= 32 A

1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Figure 2: Typical Transfer Characteristics

25˚C

125˚C

= 3 V

– Drain Current (A)

– Gate-to-Source Voltage (V)

1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

25˚C

125˚C

= 6 V

120

100

3.0

3.5

2.0

2.5 4.0 4.5 5.0

Figure 4: Typical R

DS(on)

vs. V

for Various Temperatures

25˚C

125˚C

= 16 A

DS(on)

– Drain-to-Source Resistance (mΩ)

– Gate-to-Source Voltage (V)