MS4N1350HGB2/T1/B0/E0/C0
H1.07 Maspower
1
Features
VDS=1500V,ID=4A
RDS(on)<8Ω @ VGS=10V
100% avalanche tested
Intrinsic capacitances and
Qg minimized
High speed switching
Applications
Switching applications
Absolute Ratings (Tc=25℃)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DSS
1500
V
Gate-Source Voltage
V
GSS
±30
V
Drain Current-continuous
I
D
4
A
Drain Current-pulse
I
DM
10
A
Single Pulsed Avalanche Energy
E
AS
1056
mJ
Maximum Power Dissipation（TO-3PF）
PD
96
W
Maximum Power Dissipation（TO-220F）
PD
63
W
Maximum Power Dissipation（TO-3PB）
PD
140
W
Maximum Power Dissipation（TO-263）
PD
80
W
Maximum Power Dissipation（TO-247）
PD
140
W
Operating and Storage Temperature
Range
T
J
,T
STG
-55~+150
℃
Electrical Characteristics(T
CASE
=25℃ unless otherwise specified)
Parameter
Symbol
Tests conditions
Typ
Max
Units
Drain-Source Voltage
BV
DSS
I
D
=250μA,V
GS
=0V
-
-
V
Zero Gate Voltage Drain
Current
I
DSS
V
DS
=V
DSS
,V
GS
=0V
-
10
μA
Gate-Body Leakage
Current
I
GSS
V
GS
=±30V，V
DS
=0V
-
±100
nA
MS4N1350HGB2/T1/B0/E0/C0
H1.07 Maspower
2
On-Characteristics
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250μA
-
6.0
V
Static Drain-Source
On-Resistance
R
DS(ON)
V
GS
=10V,I
D
=2A
6.3
8
Ω
Forward
Transconductance
g
fs
V
DS
=40V,I
D
=4A
8.7
-
S
Dynamic Characteristics
Input capacitance
C
iss
V
DS
=25V,
V
GS
=0V,
f=1.0MHZ
1364
-
pF
Output capacitance
C
oss
104
-
pF
Reverse transfer
capacitance
C
rss
18
-
pF
Electrical Characteristics(T
CASE
=25℃ unless otherwise specified)
Parameter
Symbol
Tests conditions
Min
Typ
Max
Units
Switching-Characteristics
Turn-On delay time
t
d(on)
V
DS
=750V,
I
D
=4A,
V
GS
=10V
-
23.4
-
ns
Turn-On rise time
t
r
-
34
-
ns
Turn-Off delay time
t
d(Off)
-
103.2
-
ns
Turn-Off rise time
t
f
-
47.2
-
ns
Total Gate Charge
Q
g
V
DS
=750V,I
D
=4A,
V
GS
=10V
-
31
-
nC
Gate-Source charge
Q
gs
-
8
-
nC
Gate-Drain charge
Q
gd
-
10
-
nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous
Drain-Source Diode
Forward Curret
V
SD
V
GS
=0V,I
S
=4A
-
-
1.6
V
Diode Forward Current
I
S
TC=25℃
-
-
4
A
Reverse recovery time
Trr
I
S
=4A,
dI/dT=100A/μS
-
-
237.4
nS
Reverse recovery charge
Qrr
-
1.33
-
μC