SPECIALTY CHEMICALS AND ENGINEERED MATERIALS
Silicon Carbide
(SiC) Slurries
High performance slurries for scalable
manufacturing of atomically smooth
and defect-free SiC (silicon carbide)
wafers
Specifically designed for lapping or mechanically polishing SiC wafers.
Entegris is the market leader in SiC (silicon carbide) polishing
slurries specifically designed for lapping or mechanically
polishing SiC wafers with Si-face, C-face, and single or
polycrystalline surfaces. These slurries are optimized for
batch and single-wafer CMP systems.
Our SiC slurries deliver at ultra-high polishing rates - up to
10 times faster than existing processes - with excellent
uniformity. Enabled with advanced additives, they achieve
atomically smooth surfaces with no sub-surface damage.
Our portfolio includes products that reduce cost of
ownership while maintaining low defectivity. Custom
solutions are available upon request.
APPLICATIONS
CMP/lapping of silicon carbide (SiC)•
Polish all surface types (lapped or mechanically polished) into
epi-ready condition
•
2
SPECIFICATIONS
Slurry Polishing
face
Polishing
type
Description Material
removal rate
Surface
finish
(5 µm x 5 µm
AFM scan)
SC-2000
(formerly
SC-HR4)
Si-face CMP Ultra-high removal slurry with
uniform polishing
Optimized for single-wafer
polishers
8 - 10
µm/hr
0.1 - 0.2 nm
SC-2400D
(formerly
SCDIL4)
Si-face CMP Dilutable slurry for low COO
Dilutable up to 4x
Optimized for batch polishing
systems
3.5 - 5.5
µm/hr
0.1 - 0.2 nm
SC-2200
(formerly
SC-1T)
Si-face CMP Market-leading slurry for high
removal and high finish
Optimized for batch polishing
systems
4 - 5 µm/hr 0.1 - 0.15
nm
SC-3100
(formerly
MC6B)
Si-face and
C-face
Lapping Nanodiamond-based lapping
slurry, reducing CMP time
Low sub-surface damage, ~0.25-
0.5 µm
Very high removal rates
15 - 18
µm/hr
0.7 - 1.2 nm
SC-1100
(formerly
SC-CHF4)
C-face CMP High removal rate slurry with
ultra-high finish
Used for both batch polishing
and single-wafer polishing
systems
3 - 4 µm/hr 0.1 - 0.15
nm