STN2610D
N Channel Enhancement Mode MOSFET
50.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN2610D 2009. V1
DESCRIPTION
STN2610D is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION
TO-252 TO-251
PART MARKING
Y
：
Year Code
A
：
Process Code
B
：
Process Code
FEATURE
l 60V/10.0A, R
DS(ON)
= 10mΩ (Typ.)
@VGS = 10V
l 60V/8.0A, R
DS(ON)
= 12mΩ
@VGS = 4.5V
l Super high density cell design for
extremely low R
DS(ON)
l Exceptional on-resistance and
maximum DC current capability
l TO-252, TO-251 package design
STN2610D
N Channel Enhancement Mode MOSFET
50.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN2610D 2009. V1
ABSOULTE MAXIMUM RATINGS (Ta = 25
℃
Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(TJ=150
℃
)
ID
50.0
28.0
A
Pulsed Drain Current
IDM
180
A
Continuous Source Current (Diode Conduction)
IS
36
A
Power Dissipation
PD
63
0.5
W
Operation Junction Temperature
TJ
175
℃
Storgae Temperature Range
TSTG
-55/155
℃
Thermal Resistance-Junction to Ambient
RθJA
62
℃
/W