STS10T06
Low Vf Schottky Diode
10.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2015, Stanson Corp.
STS10T06 2015. V1
DESCRIPTION
STS10T06 is designed with trench technology to provide excellent low Vf. Those
devices are suitable for use for switching power supply.
PIN CONFIGURATION (TO-277A)
ORDERING INFORMATION
Part Number
Package
Part Marking
STS10T06T277RGB
TO-277A
ST10S06
※ STS10T06T277RGB: Tube; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(TA=25 U℃nless otherwise noted)
Parameter
Symbol
Typical
Unit
Repetitive Peak Reverse Voltage
VRRM
65
V
DC Blocking Voltage
VRM
65
V
Working Repetitive Reverse Voltage
VRWM
65
V
Average Rectifier Forward Current per Leg
IO
10
A
Peak Forward Surge Current - 1/2 60Hz
IFSM
150
A
Repetitive Peak Reverse Surge Current
IRRM
1
A
Power dissipation
PD
165
W
Thermal Resistance Junction to Ambient
RθJC
2
℃/W
Storage Temperature Range
TSTG
-40 ~ 150
℃
FEATURES
! Vf<=0.5V
! Fast Switching Speed
! Low Forward Voltage,
! Reliable High Temperature Operation
! Lead Free, RoHS Compliance
STS10T06
Low Vf Schottky Diode
10.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2015, Stanson Corp.
STS10T06 2015. V1
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Reverse Breakdown Voltage
VBR
IR = 10mA
65
V
Instantaneous Forward Voltage
VF
IF = 5A, TJ = 25℃
0.46
V
IF = 10A, TJ = 25℃
0.55
IF = 5A, TJ = 125℃
0.42
IF = 10A, TJ = 125℃
0.5
Instantaneous Reverse Current
IR
VR = 65V, TJ = 25℃
200
uA
VR = 65V, TJ = 125℃
20
mA