STN7120DN
N Channel Enhancement Mode MOSFET
50A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN7120DN 2017 V1
DESCRIPTION
STN7120DN uses Trench MOSFET technology that is uniquely optimized to provide the
most efficient nigh frequency switching performance. It has been optimized for low
gate charge, low R
DS(ON)
and fast switching speed.
PIN CONFIGURATION
POWER PACK 5x6
D D D D
S S S G
Y
：
Year Code
A
：
Date Code
B
：
Package Code
C
：
Process Code
ABSOULTE MAXIMUM RATINGS (Ta = 25
℃
Unless otherwise noted )
FEATURE
l 60V/10A, R
DS(ON)
= 12mΩ
@VGS = 10V
60V/8A, R
DS(ON)
= 15mΩ
@VGS = 4.5V
l Super high density cell design for
extremely low R
DS(ON)
l Exceptional on-resistance and
maximum DC current capability
l PPAK5x6 package design
STN7120DN
N Channel Enhancement Mode MOSFET
50A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN7120DN 2017 V1
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(TJ=150
℃
)
ID
50
31
A
Pulsed Drain Current
IDM
200
A
Continuous Source Current (Diode Conduction)
IS
35
A
Power Dissipation
PD
96
W
Operation Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
62
℃
/W