PSMB050N10NS2
July 21,2022 PSMB050N10NS2-REV.00 Page 1
100V N-Channel Enhancement Mode MOSFET
TO-263
Feature
R
DS(ON),max
< 5.0 mΩ at V
GS
= 10 V, I
D
= 50 A
R
DS(ON),max
< 7.0 mΩ at V
GS
= 6 V, I
D
= 25 A
High switching speed
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: TO-263 package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 1.38 grams
Application
SR solutions of Power supply, BMS, BLDC motor driver switch.
Absolute Maximum Ratings (T
A
= 25
o
C unless otherwise specified)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
±20
Continuous Drain Current
(Note 3)
T
C
=25
o
C
I
D
120
A
T
C
=100
o
C
76
Pulsed Drain Current
(Note 6)
T
C
=25
o
C
I
DM
480
A
Single Pulse Avalanche Current
(Note 5)
I
AS
50
A
Single Pulse Avalanche Energy
(Note 5)
E
AS
318
mJ
Power Dissipation
T
C
=25
o
C
PD
138
W
T
C
=100
o
C
55
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55~150
o
C
Thermal Characteristics
PARAMETER
MAXIMUM
UNITS
Thermal Resistance
Junction-to-Case (Bottom)
0.9
o
C/W
Junction-to-Ambient
(Note.4)
60
o
C/W
Voltage
R
DS(ON),max
100 V
< 5.0 mΩ
Current
Q
G (TYP)
120 A
40.5 nC
PSMB050N10NS2
July 21,2022 PSMB050N10NS2-REV.00 Page 2
Electrical Characteristics (T
A
= 25
o
C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0 V, I
D
=250 μA
100
-
-
V
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=270 μA
1.8
2.8
3.8
Drain-Source On-State Resistance
(Note 1)
R
DS(on)
V
GS
=10 V, I
D
=50 A
-
4.3
5.0
mΩ
V
GS
=6 V, I
D
=25 A
-
5.4
7.0
Zero Gate Voltage Drain Current
I
DSS
V
DS
=100 V, V
GS
=0 V
-
-
1
μA
Gate-Source Leakage Current
I
GSS
V
GS
=±20 V, V
DS
=0 V
-
-
±100
nA
Transfer characteristics
(Note 1)
g
fs
V
DS
=10 V, I
D
=50 A
-
100
-
S
Gate Resistance
R
g
f =1.0 MHz
-
0.8
1.6
Ω
Dynamic
(Note 6)
Total Gate Charge
Q
g
V
DS
=50 V, I
D
=50 A,
V
GS
=10 V
-
40.5
53
nC
Gate-Source Charge
Q
gs
-
15
-
Gate-Drain Charge
Q
gd
-
6
-
Gate Plateau Voltage
V
plateau
-
5
-
V
Input Capacitance
C
iss
V
DS
=50 V, V
GS
=0 V,
f=250 kHz
-
3010
3910
pF
Output Capacitance
C
oss
-
1080
1400
Reverse Transfer Capacitance
C
rss
-
14
-
Output Charge
Q
oss
V
DS
=50 V, V
GS
=0 V
-
85
110
nC
Turn-On Delay Time
t
d(on)
V
DD
=50 V, I
D
=50 A,
V
GS
=10 V, R
G
=3.0 Ω
(Note 2)
-
16
-
ns
Rise Time
t
r
-
6
-
Turn-Off Delay Time
t
d(off)
-
25
-
Fall Time
t
f
-
6
-
Drain-Source Diode
Diode Forward Voltage
V
SD
I
S
=50 A, V
GS
=0 V
-
0.9
1.2
V
Reverse Recovery Charge
(Note 6)
Q
rr
I
F
=50 A, V
DD
=50 V
di/dt=100 A/μs
-
85
170
nC
Reverse Recovery Time
(Note 6)
T
rr
-
56
112
ns
NOTES :
1. Pulse width < 300 μs, Duty cycle < 2 %
2. Essentially independent of operating temperature typical characteristics.
3. The maximum drain current calculated by maximum junction temperature and thermal impedance. It can be varied by
application and environment.
4. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
2
with 2oz.square pad of copper.
5. E
AS
is calculated based on the condition of L = 1.0 mH, I
AS
= 25.2 A, V
DD
= 50 V, V
GS
= 10 V. 100% test at L = 0.1 mH,
I
AS
= 50 A in production.
6. Guaranteed by design, not subject to production testing.