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Full SiC Power Modules
Full SiC Power Modules 137
Category Full SiC Power Modules
2022 Edition
Full SiC Power Modules
●Quick Reference for Full SiC Power Modules
V
DSS
(V)
R
DS (on)
(mΩ)
Case type
C type E type G type
1,200
34 BSM080D12P2C008
20
BSM120D12P2C005
BSM120C12P2C201
12.8 BSM180D12P2C101
12.2
BSM180C12P2E202
BSM180D12P2E002
10
BSM180D12P3C007
BSM180C12P3C202
7.3 BSM300D12P2E001
6.3
BSM300C12P3E201
BSM300C12P3E301
5.75 BSM400D12P2G003
5.55 BSM300D12P3E005
4.5
BSM400D12P3G002
BSM400C12P3G202
3
BSM600D12P3G001
BSM600C12P3G201
1,700 8 BSM250D17P2E004
Full SiC Power Modules
Full SiC Power Modules
P.137
Full SiC Power Modules
Part No.
Absolute Maximum Ratings (T
j
=25°C)
Internal Circuit
V
DSS
(V)
I
D
(A)
T
j
(°C)
Tstg
(°C)
Visol (V)
AC 1min
Package
Boost chopper/Step down chopper type
BSM120C12P2C201 1,200 120 −40 to +175 −40 to +125 2,500
C type
BSM180C12P3C202 1,200 180 −40 to +175 −40 to +125 2,500
BSM180C12P2E202 1,200 180 −40 to +175 −40 to +125 2,500
E type
BSM300C12P3E201 1,200 300 −40 to +175 −40 to +125 2,500
BSM400C12P3G202 1,200 400 −40 to +175 −40 to +125 2,500
G type
BSM600C12P3G201 1,200 600 −40 to +175 −40 to +125 2,500
BSM300C12P3E301 1,200 300 −40 to +175 −40 to +125 2,500 E type
Half bridge type
BSM180D12P2C101 1,200 180 −40 to +175 −40 to +125 2,500
C type
BSM080D12P2C008 1,200 80 −40 to +175 −40 to +125 2,500
BSM120D12P2C005 1,200 120 −40 to +175 −40 to +125 2,500
BSM180D12P3C007 1,200 180 −40 to +175 −40 to +125 2,500
BSM180D12P2E002 1,200 180 −40 to +175 −40 to +125 2,500
E typeBSM300D12P2E001 1,200 300 −40 to +175 −40 to +125 2,500
BSM300D12P3E005 1,200 300 −40 to +175 −40 to +125 2,500
BSM400D12P2G003 1,200 400 −40 to +175 −40 to +125 2,500
G typeBSM400D12P3G002 1,200 400 −40 to +175 −40 to +125 2,500
BSM600D12P3G001 1,200 600 −40 to +175 −40 to +125 2,500
BSM250D17P2E004 1,700 250 −40 to +175 −40 to +125 3,400 E type
137
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Full SiC Power Modules
Full SiC Power Modules
●Dimensions (Unit: mm)
●Part No. Explanation
B 1S 2M 0 D 1 P C 0 0 52 2
① ② ③ ④ ⑤
①
SiC Power Module
②
Rated Current
③
C → Entering 1 circuit
D → Entering 2 circuit
④
Breakdown Voltage
Example 12 → 1,200V
⑤
Device type
P2 2nd generation SiC MOSFET
P3 3rd generation SiC MOSFET
⑥
Case type
⑦
Additional Number
⑥ ⑦
15.4
6.7
17
3.8
10.8
1.3
22
40.5
50
62
D1
S2
S1D2
S1D2
G2
SS2
G1
SS1
DS1
NTC
NTC
4-φ5.5
MOUNTINGHOLES
152
137
122
110
99
17
21.1
93
122
45.6
28
107.7
107
7
42.8
D1D1
S2
S2
S1D2
S1D2
S1D2
S1D2
G2
D1 S2
S1D2
S1D2
SS2 SS2
G1
4-M6NUTS
＊DonotconnecttoNCpin.
2-φ5.5
MOUNTINGHOLES
G2G2
SS2
SS2
N.C
N.C
N.C
SS1
SS1
G1
G1
D1
S2
DS1 SS1 G1 NTC NTC
G2 SS2
4-M6NUTS
4-φ5.5
MOUNTINGHOLES
110
137
152
122
2.3
1.0
8.2
17
1.6
3.8
S1D2
S1D2
22
41.8
50
62
6.5
15.4
C type
G type
E type
Full SiC Power Modules
138
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Full SiC Power Modules
Full SiC Power Modules