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DMX1072/DMS1072
Depletion-Mode Power MOSFET
General Features
➢ Depletion Mode (Normally On)
➢ Proprietary Advanced Planar Technology
➢ Rugged Polysilicon Gate Cell Structure
➢ ESD Improved Capability
➢ Fast Switching Speed
➢ RoHS Compliant
➢ Halogen-free Available
Applications
➢ Suppressing Surge Current
➢ Normally-on Switches
➢ Constant Current Source
➢ Protection Circuits
Ordering Information
Part Number
Package
Marking
Remark
DMX1072
SOT-89
1072
Halogen Free
DMS1072
SOT-223
1072
Halogen Free
Absolute Maximum Ratings T
A
=25℃ unless otherwise specified
Symbol
Parameter
DMX1072
DMS1072
Unit
V
DSX
Drain-to-Source Voltage
[1]
100
V
V
DGX
Drain-to-Gate Voltage
[1]
100
V
I
D
Continuous Drain Current
0.3
A
I
DM
Pulsed Drain Current
[2]
1.2
P
D
Power Dissipation
1.0
1.5
W
Derating Factor above 25℃
0.008
0.012
W/℃
V
GS
Gate-to-Source Voltage
±20
V
V
ESD(G-S)
Gate Source ESD
IEC, C=150pF, R=330Ω
1500
V
T
L
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
300
℃
T
J
and T
STG
Operating and Storage Temperature Range
-55 to 150
Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
DMX1072
DMS1072
Unit
R
θJC
Thermal Resistance, Junction-to-Case
125
83
K/W
BV
DSX
R
DS(ON)
(Max.)
I
D
100V
3.0Ω
0.3A
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DMX1072/DMS1072
Electrical Characteristics
OFF Characteristics T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
BV
DSX
Drain-to-Source Breakdown Voltage
100
--
--
V
V
GS
=-5V, I
D
=250µA
I
D(OFF)
Drain-to-Source Leakage Current
--
--
1
µA
V
DS
=100V, V
GS
=-5V
--
--
1
mA
V
DS
=100V, V
GS
=-5V
T
J
=125℃
I
GSS
Gate-to-Source Leakage Current
--
--
20
µA
V
GS
=+20V, V
DS
=0V
--
--
-20
V
GS
=-20V, V
DS
=0V
ON Characteristics T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
I
DSS
Saturated Drain-to-Source Current
0.3
--
--
A
V
GS
=0V, V
DS
=25V
R
DS(ON)
Static Drain-to-Source On-Resistance
--
--
3.0
Ω
V
GS
=0V, I
D
=0.15A
[3]
--
--
2.8
Ω
V
GS
=5V, I
D
=0.15A
[3]
V
GS(OFF)
Gate-to-Source Cut-off Voltage
-3.3
--
-1.5
V
V
DS
=3V, I
D
=8µA
gfs
Forward Transconductance
--
0.46
--
S
V
DS
=20V, I
D
=0.15A
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
C
ISS
Input Capacitance
--
81.3
--
pF
V
GS
=-5V
V
DS
=25V
f=1.0MH
Z
C
OSS
Oput Capacitance
--
32.7
--
C
RSS
Reverse Transfer Capacitance
--
6.6
--
Q
G
Total Gate Charge
--
2.52
--
nC
V
GS
=-5V~5V
V
DS
=50V, I
D
=0.15A
Q
GS
Gate-to-Source Charge
--
0.69
--
Q
GD
Gate-to-Drain (Miller) Charge
--
0.7
--
Resistive Switching Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
t
d(ON)
Turn-on Delay Time
--
6.2
--
ns
V
GS
=-5V~5V
V
DD
=50V, I
D
=0.15A
R
G
=10 Ω
t
rise
Rise Time
--
4.8
--
t
d(OFF)
Turn-off Delay Time
--
11.6
--
t
fall
Fall Time
--
17
--