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© 2021 fast SiC Semiconductor Inc.
Rev. Preliminary Oct. 2021
Product Datasheet
FH06010
Silicon Carbide Merged PN-Schottky Diode
650V SiC MPS High Power Rectifier – Husky Series
Product Datasheet
• Higher System Efficiency
• Increase Parallel Device Convenience
• Enable High Temperature Application
• Allow High Frequency Operation
• Realize Compact and Lightweight Systems
• High Reliability
Parameter
Symbol
Value
Unit
DC Blocking Voltage
V
R
6
50
V
Nominal Forward Current
I
F, NOM
10
A
Total Capacitive Charge
Q
C
22.5
nC
Capacitance Stored Energy
E
C
3.25
μ
J
Junction & Storage Temperature
T
j
, T
stg
-
55 to 175
°
C
TO
-220-2L
Continuous
Forward Current
I
F, max (cont.)
29
A
I
2
t Value
∫i
2
dt
A
2
s
Power Dissipation
P
tot
75
W
TO
-220FP-2L
Continuous
Forward Current
I
F, max (cont.)
20
A
I
2
t Value
∫i
2
dt
A
2
s
Power Dissipation
P
tot
40.5
W
• Switching Mode Power Supply
• Power Factor Correction
• Portable Adaptor
• Renewable Energy
Part Number Package Marking
FH06010C TO-220-2L FH06010
FH06010D TO-220-2L (Full-Pack) FH06010
-- -- --
Features
Product Information:
Key Performance Parameters
Potential ApplicationsBenefits
• Ultra-Low Forward Voltage (V
F
)
• Zero Forward Recovery
• Zero Reverse Recovery
• High Surge Current Capability
• Optimized for High Power Applications
• RoHS Compliant and Halogen Free
For further information about comparable products, please contact (www.fastsic.com).
Terminal
Packaging Type
TO-220-2L TO-220FP-2L
Anode 2 2
Cathode 1, Tab 1
-- -- --
Cathode
Anode
TO-220FP-2L
1
2
COMPLIANT
Tab
TO-220-2L
1
2
www.fastsic.com
© 2021 fast SiC Semiconductor Inc.
Rev. Preliminary Oct. 2021
Product Datasheet
Product Datasheet
FH06010
Parameter
Symbol
Min. Typ.
Max.
Unit
Test Conditions
DC Characteristics
DC Blocking Voltage
V
DC
650 -- --
V
T
j
=25°C
Forward Voltage
V
F
--
1.29
1.45
1.55
--
I
F
=10A, T
j
=25°C
I
F
=10A, T
j
=175°C
Reverse Current
I
R
--
3
30 --
μ
A
V
R
=520V, T
j
=25°C
V
R
=520V, T
j
=175°C
AC Characteristics
Total Capacitive Charge
Q
C
-- 22.5 --
nC
V
R
=400V, T
j
=25°C
Total Capacitance
C
j
--
410
42
32
--
pF
V
R
=1V, f=1MHz, T
j
=25°C
V
R
=200V, f=1MHz, T
j
=25°C
V
R
=400V, f=1MHz, T
j
=25°C
Capacitance Stored Energy
E
C
-- 3.25 --
μ
J
V
R
=400V, T
j
=25°C
Electrical Characteristics:
Maximum Ratings:
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
TO
-220-2L
Continuous
Forward Current
I
F
-- --
10
17.5
28.5
A
T
c
≤150°C, Duty=100%
T
c
≤110°C, Duty=100%
T
c
≤25°C, Duty=100%
Non
-Repetitive Forward Surge
Current, Sinusoidal Halfwave
I
F,SM
-- -- 60
T
c
=25°C, t
p
=10ms
Non
-Repetitive Peak Forward
Surge Current
I
F,max
-- -- 380
T
c
=25°C, t
p
=10μs
I
2
t Value
∫i
2
dt -- --
A
2
s
T
c
=25°C, t
p
=10ms
TO
-220FP-2L
Continuous
Forward Current
I
F
-- --
6
12
20
A
T
c
≤150°C, Duty=100%
T
c
≤110°C, Duty=100%
T
c
≤25°C, Duty=100%
Non
-Repetitive Forward Surge
Current, Sinusoidal Halfwave
I
F,SM
-- -- 60
T
c
=25°C, t
p
=10ms
Non
-Repetitive Peak Forward
Surge Current
I
F,max
-- -- 360
T
c
=25°C, t
p
=10μs
I
2
t Value
∫i
2
dt -- --
A
2
s
T
c
=25°C, t
p
=10ms
Repetitive Peak Reverse Voltage
V
RRM
-- -- 650
V
T
c
=25°C
Power Dissipation (TO
-220-2L)
P
tot
-- -- 75
W
T
c
=25°C
Power Dissipation (TO
-220FP-2L)
P
tot
-- -- 40.5
T
c
=25°C
Junction Temperature
T
j
-55 -- 175
°
C
--
Storage Temperature
T
stg
-55 -- 175
Soldering Temperature
T
L
-- -- 260
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Thermal Impedance, junction
–
case
(TO-220-2L)
R
th-jc
-- 2.0 --
K/W
--
Thermal Impedance, junction
–
case
(TO-220FP-2L)
R
th-jc
-- 3.7 --
--
Thermal Impedance, junction
–
ambient
R
th-ja
--
Device on PCB, with 6 cm² of
cooling area
Thermal Characteristics: