www.fastsic.com
© 2020 fast SiC Semiconductor Inc.
Rev. Preliminary – Sep. 2020
Product Datasheet
FH06004
Silicon Carbide Merged PN-Schottky Diode
600V, 4A SiC MPS High Power Rectifier – Husky Series
Product Datasheet
• Higher System Efficiency
• Increase Parallel Device Convenience
• Enable High Temperature Application
• Allow High Frequency Operation
• Realize Compact and Lightweight Systems
• High Reliability
Parameter Symbol Value Unit
DC Blocking Voltage V
R
600 V
Nominal Forward Current I
F, NOM
4
AContinuous Forward Current I
F, max (cont.)
13.5
Non-Rep. Forward Surge Current I
F,SM
32
Power Dissipation P
tot
46.8
W
I
2
t Value ∫i
2
dt
5.1
A
2
s
Total Capacitive Charge Q
C
10
nC
Junction & Storage Temperature T
j
, T
stg
-55 to 175
°C
• Switching Mode Power Supply
• Power Factor Correction
• Portable Adaptor
• Renewable Energy
Part Number Package Marking
FH06004A TO-252-2L FH06004
FH06004B PQFN 5 x 6 FH06004
-- -- --
Features
Product Information:
Key Performance Parameters
Potential ApplicationsBenefits
• Ultra-Low Forward Voltage (V
F
)
• Low Profile & Low Parasitic Inductance Packaging
• Zero Reverse Recovery
• High Surge Current Capability
• Optimized for High Power Applications
• Compact MSL-1 SMT Package
• RoHS Compliant and Halogen Free
For further information about comparable products, please contact (www.fastsic.com).
Terminal
Packaging Type
TO-252-2L PQFN 5x6
Anode 2 1, 2, 3
Cathode 1, Tab 5, 6, 7, 8
N.C. -- 4
Cathode
Anode
PQFN 5 x 6
1
2
3
4
8
7
6
5
TO-252-2L
1
2
COMPLIANT
Tab
www.fastsic.com
© 2020 fast SiC Semiconductor Inc.
Rev. Preliminary – Sep. 2020
Product Datasheet
Product Datasheet
FH06004
Parameter Symbol Min. Typ. Max. Unit Test Conditions
DC Characteristics
DC Blocking Voltage V
DC
600 -- --
V
T
j
=25°C
Forward Voltage V
F
--
1.28
1.45
I
F
=4A, T
j
=25°C
I
F
=4A, T
j
=175°C
Reverse Current I
R
--
2
20
μA
V
R
=520V, T
j
=25°C
V
R
=520V, T
j
=175°C
AC Characteristics
Total Capacitive Charge Q
C
-- 10 -- nC V
R
=400V, T
j
=25°C
Total Capacitance C
j
--
140
20
18
-- pF
V
R
=1V, f=1MHz, T
j
=25°C
V
R
=200V, f=1MHz, T
j
=25°C
V
R
=400V, f=1MHz, T
j
=25°C
Capacitance Stored Energy E
C
-- 1.6 -- μJ V
R
=400V, T
j
=25°C
Electrical Characteristics:
Maximum Ratings:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Electrical Characteristics
Continuous Forward Current I
F
-- --
4
8.4
13.5
A
T
c
≤150°C, Duty=100%
T
c
≤110°C, Duty=100%
T
c
≤25°C, Duty=100%
Repetitive Forward Surge
Current, Sinusoidal Halfwave
I
F,RM
-- --
19
12
T
c
=25°C, t
p
=10ms, Duty=10%
T
c
=110°C, t
p
=10ms, Duty=10%
Non-Repetitive Forward Surge
Current, Sinusoidal Halfwave
I
F,SM
-- --
32
28
T
c
=25°C, t
p
=10ms
T
c
=110°C, t
p
=10ms
Non-Repetitive Peak Forward
Surge Current
I
F,max
-- --
184
152
T
c
=25°C, t
p
=10μs
T
c
=110°C, t
p
=10μs
I
2
t Value ∫i
2
dt -- --
5.1
3.9
A
2
s
T
c
=25°C, t
p
=10ms
T
c
=110°C, t
p
=10ms
Repetitive Peak Reverse Voltage V
RRM
-- -- 600 V T
c
=25°C
Power Dissipation P
tot
-- -- 46.8 W T
c
=25°C
Thermal Characteristics
Junction Temperature T
j
-55 -- 175
°C --Storage Temperature T
stg
-55 -- 175
Soldering Temperature T
L
-- -- 260
Thermal Impedance, junction –
case
R
th-jc
-- 3.2
K/W
--
Thermal Impedance, junction –
ambient
R
th-ja
--
Device on PCB, with 6 cm² of
cooling area