eGaN® FET PRELIMINARY DATASHEET
EPC7018
EPC POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 1
EPC7018 – Rad Hard Power Transistor
V
DS
, 100 V
R
DS(on)
, 3.9 mΩ max
I
D
, 345 A
95% Pb / 5% Sn solder
EPC7018 eGaN® FETs
are supplied only in
passivated die form
with solder bars.
Applications
• Space Applications: DC-DC power, motor drives, lidar,
ion thrusters
• Commercial satellite EPS & avionics
• Deep space probes
• High frequency Rad Hard DC-DC conversion
• Rad Hard motor drives
Features
• Ultra high eciency
• Ultra low R
DS(on)
, Q
G
, Q
GD,
Q
OSS
, and 0 Q
RR
• Ultra small footprint
• Light weight
• Total dose
– Rated > 1 Mrad
• Single event
– SEE immunity for LET of 85 MeV/(mg/cm
2
)
with V
DS
up to 100% of rated breakdown
• Neutron
– Maintains Pre-Rad specication for
up to 3 x 10
15
Neutrons/cm
2
Benets
• Superior radiation and electrical performance vs. rad
hard MOSFETs: smaller, lighter, and greater radiation
hardness
EFFICIENT POWER CONVERSION
G
D
S
Maximum Ratings
PARAMETER VALUE UNIT
V
DS
Drain-to-Source Voltage (Continuous) 100
V
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120
I
D
Continuous (T
A
= 25°C) 90
A
Pulsed (25°C, T
PULSE
= 300 µs) 345
V
GS
Gate-to-Source Voltage 6
V
Gate-to-Source Voltage -4
T
J
Operating Temperature -55 to 150
°C
T
STG
Storage Temperature -55 to 150
Thermal Characteristics
PARAMETER TYP UNIT
R
θJC
Thermal Resistance, Junction-to-Case 0.4
°C/W R
θJB
Thermal Resistance, Junction-to-Board 1.1
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1) 42
Static Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BV
DSS
Drain-to-Source Voltage V
GS
= 0 V, I
D
= 0.4 mA 100 V
I
DSS
Drain-Source Leakage V
GS
= 0 V, V
DS
= 100 V 0.001 0.4
mA
I
GSS
Gate-to-Source Forward Leakage V
GS
= 5 V 0.01 0.5
Gate-to-Source Forward Leakage
#
V
GS
= 5 V, T
J
= 125˚C 0.05
Gate-to-Source Reverse Leakage V
GS
= -4 V 0.01 0.5
V
GS(TH)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 12 mA 0.8 1.2 2.5 V
R
DS(on)
Drain-Source On Resistance V
GS
= 5 V, I
D
=25 A 2.7 3.9 mΩ
V
SD
Source-Drain Forward Voltage
#
I
S
= 0.5 A, V
GS
= 0 V 1.8 V
Note 1: R
θJA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
# Dened by design. Not subject to production test.
Rad Hard eGaN® transistors have been specically designed for critical applications in the high reliability or
commercial satellite space environments. GaN transistors oer superior reliability performance in a space
environment because there are no minority carriers for single event, and as a wide band semiconductor
there is less displacement for protons and neutrons, and additionally there is no oxide to breakdown.
These devices have exceptionally high electron mobility and a low temperature coecient resulting in
very low R
DS(on)
values. The lateral structure of the die provides for very low gate charge (Q
G
) and extremely
fast switching times. These features enable faster power supply switching frequencies resulting in higher
power densities, higher eciencies and more compact designs.
Preliminary
HAL
Die size: 6.05 x 2.3 mm