ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 1.0 Mar. 2022
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DMZ1315EL/DMX1315EL
UltraVt
®
Depletion-Mode Power MOSFET
General Features
➢ ESD Improved Capability
➢ Depletion Mode (Normally On)
➢ Proprietary Advanced Planar Technology
➢ Proprietary Advanced Ultrahigh Vth Technology
➢ RoHS Compliant
➢ Halogen-free Available
Applications
➢ Quick Charger
➢ Current Source
➢ Voltage Source
➢ Type-C/PD charger
General Description
This novel depletion mode MOSFET, developed and manufactured by ARK proprietary UltraVt
®
technology.
It has a high threshold voltage. By using the sub threshold characteristics, the depletion mode MOSFET can
provide stably power to the load, and the voltage can be clamped to protect the load without Zener diode, and the
circuit consumption is reduced.
Ordering Information
Part Number
Package
Marking
Remark
DMZ1315EL
SOT-23
1315L
Halogen Free
DMX1315EL
SOT-89
1315L
Halogen Free
Absolute Maximum Ratings T
A
=25℃ unless otherwise specified
Symbol
Parameter
DMZ1315EL
DMX1315EL
Unit
V
DSX
Drain-to-Source Voltage
[1]
130
V
I
D
Continuous Drain Current
0.1
A
I
DM
Pulsed Drain Current
[2]
0.4
P
D
Power Dissipation
0.5
1.0
W
V
GS
Gate-to-Source Voltage
±30
V
V
ESD
Gate to Source ESD
[3]
700
V
Source to Gate ESD
[3]
700
V
T
L
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
300
℃
T
J
and T
STG
Operating and Storage Temperature Range
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
DMZ1315EL
DMX1315EL
Unit
R
θJA
Thermal Resistance, Junction-to-Ambient
250
125
K/W
D
G
S
SOT-23
D
S
G
D
D
S
G
SOT-89
BV
DSX
V
GS(off)
I
DSS,min
130V
-13V to -20V
100mA
ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 1.0 Mar. 2022
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DMZ1315EL/DMX1315EL
Electrical Characteristics
OFF Characteristics T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
BV
DSX
Drain-to-Source Breakdown Voltage
130
--
--
V
V
GS
=-30V, I
D
=1mA
I
D(OFF)
Drain-to-Source Leakage Current
--
--
10
µA
V
DS
=130V，V
GS
= -30V
I
GSS
Gate-to-Source Leakage Current
--
--
20
µA
V
GS
=+30V, V
DS
=0V
--
--
-20
V
GS
=-30V, V
DS
=0V
ON Characteristics T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
I
DSS
Saturated Drain-to-Source Current
100
--
--
mA
V
GS
=0V, V
DS
=25V
R
DS(ON)
Static Drain-to-Source On-Resistance
--
15
30
Ω
V
GS
=0V，I
D
=50mA
[4]
V
GS(OFF)
Gate-to-Source Cut-off Voltage
-13
--
-20
V
V
DS
=9V, I
D
=8µA
Source-Drain Diode Characteristics T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min
Typ.
Max.
Units
Test Conditions
V
SD
Diode Forward Voltage
--
--
1.2
V
I
SD
=100mA, V
GS
=-30V
NOTE：
[1] T
J
=+25℃ to +150℃
[2] Repetitive rating, pulse width limited by maximum junction temperature.
[3] The test is based on JEDEC EIA/JESD22-A114 (HBM).
[4] Pulse width≤380µs; duty cycle≤2%.