www.panjit.com
SiC Schottky Barrier Diode
For the Excellence in System Design
• Low conduction loss
• Zero reverse recovery
• Temperature independent switching
• High surge current capability
• High ruggedness
• High junction temperature 175°C
Mar. 2022-REV.05
Features
Target Application
• PV Inverter
• ESS / BMS
• Server Power
• Telecom Power
• PC Power
• EV Charging Pile
• UPS
• Industrial Motor
• Home Appliance
• Digital TV
Power System Green Energy ConsumerIndustrial
Headquarters No.24, Gangshan N. Rd., Gangshan Dist., Kaohsiung City 82063, Taiwan
TEL 886-7-621-3121 FAX 886-7-621-3129 MAIL sales@panjit.com.tw
Product List
Performance
Series
BV
(V)
I
f
(A)
V
f Typ.
(V)
TO-220AC TO-263 TO-252AA TO-247AD-2LD TO-247AD-3LD
SiC Diode
650V
650
4 1.5
PCDP0465G1
PCDB0465G1
PCDE0465G1*
PCDD0465G1
PCDC0465G1*
6 1.5
PCDP0665G1
PCDB0665G1
PCDE0665G1*
PCDD0665G1
PCDC0665G1*
8 1.5
PCDP0865G1
PCDB0865G1
PCDE0865G1*
PCDD0865G1
PCDC0865G1*
10 1.5
PCDP1065G1
PCDB1065G1
PCDE1065G1*
PCDD1065G1
PCDC1065G1*
12 1.5
PCDP1265G1
16 1.5
PCDP1665G1
20 1.5
PCDP2065G1 PCDH2065CCG1
30 1.5
PCDH3065CCG1
40 1.5
PCDH4065CCG1
SiC Diode
1200V
1200
5 1.5
PCDP05120G1
PCDD05120G1
PCDC05120G1*
8 1.5
PCDP08120G1
PCDD08120G1
PCDC08120G1*
10 1.5
PCDP10120G1
PCDB10120G1
PCDE10120G1*
PCDD10120G1
PCDC10120G1*
15 1.5
PCDP15120G1
20 1.5
PCDP20120G1
PCDB20120G1
PCDE20120G1*
PCDH20120G1 PCDH20120CCG1
30 1.5
PCDH30120CCG1
40 1.5
PCDH40120CCG1
SiC Diode 1200V / 10A
* NC 1 Pin
System Evaluation:
800W CCM Boost PFC, Vin = 110Vac/60Hz,Vout = 400V, Fsw = 65kHz
SiC Diode 650V / 10A
System Evaluation:
1.2 kW Vienna PFC, Vin = 120Vac/60Hz, Vout = 600V, Fsw = 50kHz