WPM2015-MS
Semiconductor
Compiance
www.msksemi.com
APPLICATION
Load Switch for Portable Devices
DC/DC Converter
FEATURE
TrenchFET Power MOSFET
V
(BR)DSS
R
DS(on)
MAX
I
D
-20 V
90
mΩ
@
-4.5V
-3
A
110
mΩ
@
-2.5V
1.
GATE
2.
SOURCE
3.
DRAIN
SOT
-23-3L
Maximum ratings (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
±8
Continuous Drain Current
I
D
-3
A
Pulsed Drain Current
I
DM
-10
Continuous Source-Drain Diode Current
I
S
-0.72
Maximum Power Dissipation
P
D
0.4
W
Thermal Resistance from Junction to Ambient(t ≤5s)
R
θJA
312.5
℃/W
Junction Temperature
T
J
150
℃
Storage Temperature
T
stg
-55 ~+150