2.0
Case : TO-220AB, Plastic
SB4 0100LCT
SB40100LCT
www.asemi99.com
0.71
=20A
=20A
0.80
0.74
- 40 to + 150
- 40 to + 150
20
40
4 0 Amperes
Weight: 0.055 ounces, 1.5615 grams.
PAGE . 1
2.32
4.93
2.72
4.53
0.45
DUAL LOW VF SCHOTTKY RECTIFIER
VOL
TAGE
100 V
olts
FEATURES
•
Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DAT A
T
erminals : Solderable per MIL-STD-750, Method 2026
CURRENT
MAXIMUM RATINGS(TA=25
o
C unle ss otherwise noted)
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
Note.1 Pulse test : 380μs pulse width, 1% duty cycle
2. Pulse test : Pulse width
< 2.5ms
PA
RAMETE R SYMBOL TE ST CONDITIONS MIN. TYP. MAX. UNIT
Breakdo wn voltage pe r diod e V
BR
I
R
=1
.0mA 103 120 - V
Instantaneo us forwa rd voltage per
diode
(1
)
V
F
I
F
T
J
=2
5
o
C
-
-
V
I
F
T
J
=1
25
o
C
-
-
-
V
R
eve rse current per diode
(2
)
I
R
V
R
=7
0V - 12 40 μA
V
R
=1
00V
T
J
=2
5
o
C
T
J
=1
25
o
C
-
-
-
-
50
0
35
μA
mA
PA
RAMETER SY MBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RR
M
10
0 V
Maxi mum ave rage forward rectified current (F i g .3)
per device
per diod e
I
F(
AV)
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
per diod e I
FS
M
20
0 A
Typi cal thermal resistance R
Θ
JC
o
C/W
Operating junction T
J
o
C
S
to rage temp erature rang e T
ST
G
o
C
10.36
9.96
16.07
15.67
6.5
6.9
2.65
2.75
12.9
13.3
2.45
2.2
2.74
2.34
2.74
2.34
0.9
0.7
1.24
1.20
1.46
1.26
0.6
2.96
2.56
SB4 0100LCT
SB40100LCT
www.asemi99.com
PAGE . 2
Fig.3 Forward Current Derating Curve
0
2
4
6
8
10
12
0
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
F
,
Forward Current ( A)
Per Diode
Fig.1 Typical Forward Characteristics
0.1
1
10
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V
F
, Forward Voltage (V)
I
F
,
Forward Current ( A)
T
J
= 75°C
T
J
=125°C
T
J
= 25°
C
T
J
= 150°C
Per Diode
Fig.2 Typical Reverse Characteristics
0.001
0.01
0.1
1
10
100
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Per Diode
T
J
= 25°C
T
J
= 125°C
Fig.4 Typical Junction Capacitance
10
100
1000
10000
0.1 1 10 100
V
R
, Reverse Bias Voltage (V)
Per Diode
I
R
,
Leakage Current (m A)
C
J
,
Junction
Capacitance (pF)