C
ase: JEDED SMB molded plastic over glass passivated chip
Weight: 0.003ounce, 0.0093gram
S2AB T
HRU S2MB
CURRENT 2.0 Am
pere
M
AXIMUM RATINGS & THERMAL CHARACTERISTICS
V
OLTAGE RANG 50 to 1000 Volts
1-2
www.asemi99.com
2018.11 Rev.3.1
R
atings at 25 ambient temperature unless otherwise specified
SY
MBOLS
S2
A S2B S2D S2G S2J S2K S2M UNIT
M
aximum Repetitive Peak Reverse Voltage
V
RRM
50
100 200 400 600 800 1000 Volts
M
aximum RMS Voltage
V
RMS
35
70 140 280 420 560 700 Volts
Ma
ximum DC Blocking Voltage
V
DC
50
100 200 400 600 800 1000 Volts
M
aximum Average Forward Rectified
Current at T
L
=100
I
F
(AV)
2.
0 Amps
Pe
ak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC method) T
L
=100
I
FSM
50
Amps
R
θJA
53
T
ypical Thermal Resistance (NOTE 1)
R
θJL
16
/W
O
perating and Storage Temperature Range
T
J
,T
ST
G
-55 t
o +150
ELECT
RICAL CHARACTERISTICS
SY
MBOLS
S2
A S2B S2D S2G S2J S2K S2M UNIT
Ma
ximum Instantaneous Forward Voltage at 1.5A
V
F
1.
15 Volts
T
A
=2
5
5.
0
M
aximum DC Reverse Current
at rated DC Blocking Voltage
T
A
=
125
I
R
125
µA
T
ypical Reverse Recovery Time at
I
F
=
0.5A, I
R
=
1.0A, I
RR
=0.
25A,
T
rr
2.
0 µs
T
ypical junction capacitance at 4.0V, 1MHz
C
J
30
pF
No
tes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on
P.C.B.with 0.3×0.3(8.0 × 8.0mm) copper pad areas.
FEATURES
P
lastic package has underwrites laboratory flammability
Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief, ideal for automated placement
Glass Passivated chip junction
High temperature soldering guaranteed
250/10 second at terminals
M
ECHANICAL DATA
Te
rminals: Solder plated, Solderable per MIL-STD-750, method 2026
Polarity: Color band denotes cathode end
surface mount rectifier diode
AA DO-214 (SMB)
Dimensions in inches and (millimeters)
.030(0.76)
.060(1.52)
.096(2.44)
.084(2.13)
.200(5.08)
.220(5.59)
.008(.203)
.002(.051)
.006(.152)
.012(.305)
.160(4.06)
.185(4.70)
.130(3.30)
.155(3.94)
.083(2.11)
.075(1.91)
2.0
RATI
NG AND CHRACTERISTIC CURVES S2A Thru S2M
2-2
www.asemi99.com
2018.11 Rev.3.1
CURRENT 2.0 Am
pere
VOLTAGE RANG 50 to 1000 Volts
CO
PPER PAD AREAS
0.27X0.27″ (7.0X7.0mm)
0
INDUCTIVE LOAD
50
LE
AD TEMPERATURE,( )
F1G.1-FORWARD CURRENT
DERATING CURVE
AVERAG
E FORWARD CURRENT
F
1G.5-TYPICAL JUNCTION CAPACITANCE
100101.
00.10.01
JU
NCTION CAPACITANCE,(pF)
RE
VRESE VOLTAGE,(V)
1
10
100
Vsi
g=50mVp-p
f=1MHz
T=25
J
F
ORWARD CHARACTERISTICS
F1G.3-TYPICAL INSTANTANEOUS
AM
PERES
INSTANTANEOUS FORWARD CURRENT,
F
1G.4-TYPICAL REVERSE
CHARACTERISTICS
REVERSE VOLTAGE,(%)
PERCENT OF RATED PEAK
I
NSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
J
T =
25
F
ORWARD SURGE CURRENT
F1G.2-MAXIMUM NON-REPETITIVE PEAK
AM
PERES
PEAK FORWARD SURGE CURRENT,
NUM
BER OF CYCLES AT 60 Hz
100101
L
T=
90
(
JEDEC Method)
8.3ms Single Half Sine-Wave
50
1.0
60 70 80 90 100 110 120 130 140 150
INDUCTIVE LOAD
60 Hz RESISTIVE OR
60Hz RESISTIVE OR
40
20
30
10
0
AM
PERES
1.
61.41.21.00.80.60.4
0.01
0.1
1.0
10
T=
25
P
ulse Width=300us
1
% Duty Cycle
INS
TANTANEOUS FORWARD VOLTAGE, VOLTS
10
1.
0
0.1
0.01
0 10080604020
T
=100
J
J
T
=125
J
surface mount rectifier diode
S2AB T
HRU S2MB