A2
US1AB T
HRU US1MB
09003
CURRENT 1.0 Am
pere
VOLTAGE RANG 50 to 1000 Volts
1-2
www.asemi99.com
2018.11 Rev.3.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
• Ratings at 25 ambient temperature unless otherwise specified.
• Single phase, half wave, 60Hz, resistive or inductive load.
• For capacitive load derate current by 20%.
SYMBOLS
US1A US1B US1D US1G US1J US1K US1M UNIT
Maximum Repetitive Peak Reverse Voltage
V
RRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
V
RMS
35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
V
DC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Rectified Current
At T
A
=55
I
(AV)
1.0 Amps
Peak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC Method)
I
FSM
30 Amps
Maximum Instantaneous Forward Voltage per at 1.0A
V
F
1.0 1.30 1.70 Volts
T
A
= 25
5.0
Maximum DC Reverse Current at rated
DC Blocking Voltage
T
A
= 125
I
R
100
A
Typical Reverse Recovery Time Test conditions
I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
t
rr
50 100 nS
Typical Junction Capacitance
(Measured at 1.0MHz and applied reverse voltage of 4.0V)
C
J
20 15 pF
R
θJA
88
Typical Thermal Resistance (Note 1)
R
θJL
28
/W
Operating Junction Temperature
T
J
(-55 to +150)
Storage Temperature Range
T
STG
(-55 to +150)
Notes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on
P.C.B. with 0.2×0.2″(5.0 × 5.0mm) copper pad areas.
FEATURES
• Plastic package has underwrites laboratory flammability
Classification 94V
-0
• Built-in strain relief, ideal for automated placement
• Glass passivated chip junction
• Fast switching for high efficiency
• High temperature soldering
260 /10 second
MECHANICAL DATA
• Case: JEDED DO- 14A molded plastic over
glass passivated chip
• Terminals: Solder plated, solderable pe
r
• MIL-STD-750, method
2026
• Polarity: Color band denotes cathode e
nd
• Weight: 0. ounce, 0. 4 gr
am
surface mount super-fast recovery diode
AA DO-214 (SMB)
Dimensions in inches and (millimeters)
.030(0.76)
.060(1.52)
.096(2.44)
.084(2.13)
.200(5.08)
.220(5.59)
.008(.203)
.002(.051)
.006(.152)
.012(.305)
.160(4.06)
.185(4.70)
.130(3.30)
.155(3.94)
.083(2.11)
.075(1.91)
RATI
NG AND CHRACTERISTIC CURVES US1A Thru US1M
2-2
www.asemi99.com
2018.11 Rev.3.1
CURRENT 1.0 Am
pere
VOLTAGE RANG 50 to 1000 Volts
FIG.2-MAXIMUM NON-REPETITIVE PEAK
100
T
jmax
40
2010
CHARACTERISTICS
2
30
1
0
CURRENT, (A)
PEAK FORWARDSURGE
100
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine-Wave
(JEDEC Method) T=
FORWARD SURGE CURRENT
FIG.4-TYPICAL REVERSE
DERATING CURVE
FIG.1-TYPICAL FORWARD CURRENT
150
175
125
75
100
0.8
50
0
0
Single Phase
Inductive Load
Half Wave 60Hz
Resistive or
25
AVERAGE FORWARDCURRENT,
(A)
FIG.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
AMBIENT TEMPERATURE, ( C)
JT =25
80
40
100
(μA)
1.2
JT =25 C
0.80.4
1% Duty Cycle
Pulse Width=300us
(A)(A)
1000
100
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
0.1
10
REVERSE VOLTAGE,(V)
Vsig=50mVp-p
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,
INSTANTANEOUS REVERSE CURRENT,
1.6
0.375″(9.5mm) Lead Length
f=1MHz
T =25 C
468
1 Cycle
60
10
1.010100
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
J
10
1.0
1.0
0.1
0.01
0.4
1.2
20
0.61.01.41.8
60
200
120140
T =100 CJ
50/100ns/cm
SET TIME BASE FOR
0
-1.0A
-0.25A
+0.5A
(+)
(-)
(-)
(approx.)
(+)
25 Vdc
10Ω
NONINDUCTIVENONINDUCTIVE
50Ω
(NOTE 1)
OSCILLOSCOPE
(NOTE 2)
GENERATIOR
PULSE
D.U.T.
INDUCTIVE
NON
1Ω
2.Rise time=10ns max. Source Impedance=
50 ohms
1 magohm. 22pF
NOTES : 1.Rise Time=7ns mas. Input Impedance=
REVERSE RECOVERY TIME CHARACTERISTIC
F1G.6-TEST CIRCUIT DIAGRAM AND
1cm
Trr
0.1
100
5
0
/
1
0
0
/
2
0
0
V
6
0
0
V
3
0
0
-
4
0
0
V
8
0
0
V
-
1
0
0
V
55
1.0
0.6
0.2
10
U
S
1
A
-
U
S
1
G
U
S
1
J
-
U
S
1
M
surface mount super-fast recovery diode
US1AB T
HRU US1MB