090
BF
S1ABF T
HRU S1MBF
002
CURRENT 1.0 Am
pere
VOLTAGE RANG 50 to 1000 Volts
1-2
www.asemi99.com
2018.11 Rev.3.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
• Ratings at 25 ambient temperature unless otherwise specified
.
• Single phase, half wave, 60Hz, resistive or inductive load.
• For capacitive load derate current by 20%
SYMBOLS
S1A S1B S1D S1G S1J S1K S1M UNIT
Maximum Repetitive Peak Reverse Voltage
V
RRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
V
RMS
35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
V
DC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Rectified
Current (see Fig.1)
I
F(AV)
1.0 Amps
Peak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC method) T
L
=90
I
FSM
30 Amps
Maximum Instantaneous Forward Voltage at 1.0A
V
F
1.1 Volts
T
A
= 25
5.0
Maximum DC Reverse Current at rated
DC Blocking Voltage at
T
A
= 125
I
R
50
A
R
θJA
50
Typical Junction Capacitance (NOTE 1)
R
θJL
90
/W
Typical Thermal Resistance (NOTE 2)
t
rr
1.8 s
Operating and Storage Temperature Range
T
J
,T
STG
-55 to +150
Notes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on 0.2×0.2″(5.0 × 5.0mm) copper pad areas.
2. Reverse recovery test condition: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
FEATURES
• For surface mounted applications
• Glass passivated junction
• Low profile package
• Built-in strain relief, ideal for automated placement
• Plastic package has underwrites laboratory flammability
Classification 94V
-0
• High temperature soldering guaranteed:
250 /10 second at terminals
MECHANICAL DATA
• Case: JEDED SM molded plastic
• Terminals: Plated axial lead solderable per MIL-STD-750,
method 2026
• Polarity: Color band denotes cathode end
• Mounting position: Any
• Weight: 0. ounce, 0. gram
surface mount rectifier diode
S M B F
0.73 0.77 0.75
0.021 0.20
1.96 2.00 1.98
1.38 1.351.32
3.60 3.63 3.57
4.30 4.33 4.27
5.505.55 5.45
A
E
L
B
C
E
H
D
E
D
A
Dim M
in Max Typ
B
C
H
L
A
ll Dimensions in mm
0.019
RATI
NG AND CHRACTERISTIC CURVES S1A Thru S1M
2-2
www.asemi99.com
2018.11 Rev.3.1
CURRENT 1.0 Am
pere
VOLTAGE RANG 50 to 1000 Volts
Thick Copper Pad Areas
0.2X0.2 (5.0X5.0mm)
0
0.2
0.6
0.4
0.8
1.0
16014012010080604020
Resistive or Inductive Load
0
LEAD TEMPERATURE,()
F1G.1-FORWARD CURRENT
DERATING CURVE
1.2
AVERAGE FORWARD C URRE NT(A)
1,000
100
10
1
0.010.11.010100
S1(A,J)
S1(K,M)
X0.5mil inches (0.013mm)
Thick Copper Land Areas
0.20X0.20 (5.0X5.0mm)
Units Mounted on
TRANSIENT THERMAL IMPEDANCE( /W)
T, PULSE DURATION (SEC.)
F1G.6-TRANSIENT THERMAL IMPEDANCE
F1G.5-TYPICAL JUNCTION CAPACITANCE
100101.00.10.01
JUNCTIONCAPACITANCE,(pF)
REVRESE VOLTAGE,(V)
1
10
100
Vsig=50mVp-p
f=1MHz
T =25
J
INSTANTANEOUS FORWARD VOLTAGE,(V)
FORWARD CHARACTERISTICS
F1G.3-TYPICAL INSTANTANEOUS
(A)
INSTANTANEOUS FORWARD CURRENT,
1% Duty Cycle
Pulse Width=300us
T =25
J
F1G.4-TYPICAL REVERSE
CHARACTERISTICS
REVERSE VOLTAGE,(%)
PERCENT OF RATED PEAK
INSTANTANEOUS REVERSELeakage
CURRENT,(A)
J
T =25
T =75
J
J
T =125
FORWARD SURGE CURRENT
F1G.2-MAXIMUM NON-REPETITIVE PEAK
CURRENT,(A)
PE AK FORWARD SU RGE
NUMBER OF CYCLES AT 60 Hz
2.01.61.20.8
0
1.0
80
0.4
10
0.1
0.01 0.001
0.01
1.0
801006040200
100101
10
0.1
0
LT =90
(JEDEC Method)
8.3ms Single Half Sine-Wave
0
10
100
surface mount rectifier diode
S1ABF T
HRU S1MBF