Datasheet
llOutline
V
DSS
(@Tj max.)
*5
650V
TO-247
R
DS(on)
(Max.)
0.051Ω
I
DP
*2
±231A
P
D
781W
llFeatures
llInner circuit
1) Fast reverse recovery time (trr)
2) Low on-resistance
3) Fast switching speed
4) Drive circuits can be simple
5) Pb-free plating ; RoHS compliant
6) Halogen free mold compound
llApplication
Switching applications
Marking R6077VNZ4
llAbsolute maximum ratings (T
a
= 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage
V
DSS
600 V
Continuous drain current (T
c
= 25°C) I
D
*1
±77 A
Pulsed drain current
I
DP
*2
±231 A
Gate - Source voltage
V
GSS
±30 V
Avalanche current, single pulse
I
AS
5.5 A
Avalanche energy, single pulse
E
AS
*3
326 mJ
MOSFET dv/dt dv/dt
*4
120 V/ns
Power dissipation (T
c
= 25°C) P
D
781 W
Junction temperature
T
j
150 ℃
Operating junction and storage temperature range
T
stg
-55 to +150 ℃
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© 2021 ROHM Co., Ltd. All rights reserved.
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20211217 - Rev.001
R6077VNZ4
Nch 600V 42mohm(typ.) Power MOSFET
R6077VNZ4
Datasheet
llThermal resistance
Parameter Symbol
Values
Unit
Min. Typ. Max.
Thermal resistance, junction - case
R
thJC
- - 0.16 ℃/W
Thermal resistance, junction - ambient
R
thJA
- - 50 ℃/W
Soldering temperature, wavesoldering for 10s
T
sold
- - 265 ℃
llElectrical characteristics (T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
600 - - V
Zero gate voltage
drain current
I
DSS
V
DS
= 600V, V
GS
= 0V - - 100 μA
Gate - Source leakage current
I
GSS
V
GS
= ±30V, V
DS
= 0V
- - ±100 nA
Gate threshold voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1.9mA
4.5 5.5 6.5 V
Static drain - source
on - state resistance
R
DS(on)
*5
V
GS
= 15V, I
D
= 23A
- 0.042 0.051 Ω
V
GS
= 10V, I
D
= 23A
- 0.046 0.056 Ω
Gate resistance
R
G
f = 1MHz, open drain - 1.3 - Ω
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© 2021 ROHM Co., Ltd. All rights reserved.
2/11
20211217 - Rev.001