MMDT2227
FEA
TURE
z
Epit
axial planar die construction
z
One 2222A
NPN
One 2907A PNP
z Ideal for pow
er amplification and switching
MARKING :K27
NPN 2222A
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Paramete
r Value Units
V
CBO
Coll
ector-Base Voltage 75 V
V
CE
O
Coll
ector-Emitter Voltage 40 V
V
EB
O
Emitter-Base V
oltage 6 V
I
C
Coll
ector Current -Continuous 600 mA
P
C
Coll
ector Power Dissipation 200 mW
℃
T
J
,T
st
g
Operation Junction and
Storage Temperature Range
-55~+150
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions Min Max Unit
Co
llector-base breakdown voltage
V
(B
R)CBO
I
C
= 1
0μA, I
E
=
0 75 V
Co
llector-emitter breakdown voltage
V
(B
R)CEO
I
C
=
10mA, I
B
=
0 40 V
Emitter-b
ase breakdown voltage
V
(
BR)EBO
I
E
=1
0μA.I
C
=0 6
V
Co
llector cut-off current
I
CB
O
V
CB
=
60V, I
E
=
0 10 nA
Co
llector cut-off current
I
CE
X
V
CE
=
60V,V
EB(of
f)
=
3V 10 nA
Emitter cut-off current
I
EBO
V
EB
= 3
V, I
C
=
0 10 nA
h
FE
(1)
*
V
CE
=
10V, I
C
=
0.1mA 35
h
FE
(2)
*
V
CE
=
10V, I
C
=
1mA 50
h
FE
(3)
*
V
CE
=
10V, I
C
=
10mA 75
h
FE
(4)
*
V
CE
=
10V, I
C
=
150mA 100 300
h
FE
(5)
*
V
CE
=
10V, I
C
=
500mA 40
DC cu
rrent gain
h
FE
(6)
*
V
CE
=1
V, I
C
=
150mA 35
V
CE
(sat)1
*
I
C
=
150mA, I
B
=
15mA 0.3 V
Co
llector-emitter saturation voltage
V
CE
(sat)2
*
I
C
=
500mA, I
B
=
50mA 1 V
V
BE(
sat)1
*
I
C
=
150mA, I
B
=15mA
0.6 1.2 V
Bas
e-emitter saturation voltage
V
BE(
sat)2
*
I
C
=
500mA, I
B
=
50mA 2 V
T
ransition frequency
f
T
V
CE
=
20V, I
C
=
20mA,
f=100MHz
300 MHz
Ou
tput Capacitance
C
ob
V
CB
=
10V, I
E
=0
,f=1MHz 8 pF
In
put Capacitance
C
ib
V
EB
=0
.5V,I
C
=
0,f=1MHz 25 pF
Nois
e Figure
NF
V
CE
=
10V, I
C
=
100μA,
f=1KHz,Rs=1KΩ
4 dB
pulse test
SOT-363
DUAL TRANSISTOR (NPN+PNP)
１
Ｄａｔｅ：２０２１／１０
www.htsemi.com
semiconductor
JinYu
S
witching characteristics
Para
meter Symbol Test conditions Min Max Unit
Dela
y time t
d
10 ns
Rise time t
r
25 ns
S
torage time t
S
225 ns
Fall time t
f
V
CC
=30V, I
C
=150mA,
V
BE(off)
=0
.5V,I
B1
=
15mA
60 ns
PNP
2907A
MAXIMUM RATINGS (T
a
=25℃ unless other
wise noted)
Symbol
Parameter Value Units
V
CBO
Collector-Base Voltage
-60 V
V
CE
O
Coll
ector-Emitter Voltage
-60 V
V
EB
O
Emitter-Base V
oltage
-5 V
I
C
Coll
ector Current -Continuous -600 mA
P
C
Coll
ector Power Dissipation 200 mW
℃
T
J
,T
stg
Operation Junction and
Storage Temperature Range
-55~+150
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Max Unit
Co
llector-base breakdown voltage
V
(B
R)CBO
I
C
= -1
0
μ
A, I
E
=0
-60 V
Co
llector-emitter breakdown voltage
V
(B
R)CEO
I
C
=
-10mA, I
B
=0 -60
V
Emitter-b
ase breakdown voltage
V
(
BR)EBO
I
E
=-1
0
μA, I
C
=0
-5 V
Co
llector cut-off current
I
CB
O
V
CB
=
-50V, I
E
=
0 -10 nA
Co
llector cut-off current
I
CE
X
V
CE
=
-30V,V
EB(of
f)
=
-0.5V -50 nA
Emitter cut-off current
I
EBO
V
EB
=-3
V, I
C
=
0 -10 nA
h
FE(1)
*
V
CE
=
-10V, I
C
=
-0.1mA 75
h
FE(2)
*
V
CE
=
-10V, I
C
=
-1mA 100
h
FE(3)
*
V
CE
=
-10V, I
C
=
-10mA 100
h
FE(4)
*
V
CE
=
-10V, I
C
=
-150mA 100 300
DC cu
rrent gain
h
FE(5)
*
V
CE
=
-10V, I
C
=
-500mA 50
V
CE
(
sat)1
*
I
C
=
-150mA, I
B
=-15mA -0.4 V
Co
llector-emitter saturation voltage
V
CE
(sat)2
*
I
C
=
-500mA, I
B
=- 50mA -1.6
V
V
BE(
sat)1
*
I
C
=
-150mA, I
B
=-15mA -1.3 V
Bas
e-emitter saturation voltage
V
BE(
sat)2
*
I
C
=
-500mA, I
B
= -50mA -2.6
V
T
ransition frequency
f
T
V
CE
=
-20V, I
C
=
-50mA,
f=
10
0MHz
200 MHz
Ou
tput Capacitance
C
ob
V
CB
=
-10V, I
E
= 0
,
f=1MHz
8
pF
In
put Capacitance
C
ib
V
EB
=-2
V, I
C
= 0,
f=
1MHz
30
pF
Dela
y time
t
d
10
ns
Rise time
t
r
40
ns
S
torage time
t
s
225 ns
Fall time
t
f
V
CC
=
-30V,I
C
=
-150mA, I
B1
=
-15mA
60 ns
*pulse test
２
Ｄａｔｅ：２０２１／１０
www.htsemi.com
semiconductor
JinYu
MMDT2227