RU3070L
N-Channel Advanced Power MOSFET
Features Pin Description
• 30V/70A,
R
DS (ON)
=3mΩ(Typ.)@V
GS
=10V
R
DS (ON)
=4.5mΩ(Typ.)@V
GS
=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
TO252
Applications
• Load Switch
N-Channel MOSFET
Absolute Maximum Ratings
Symbol Parameter Rating Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
Drain-Source Voltage 30
V
V
GSS
Gate-Source Voltage ±20
T
J
Maximum Junction Temperature 175 °C
T
STG
Storage Temperature Range -55 to 175 °C
I
S
Diode Continuous Forward Current T
C
=25°C 70 A
Mounted on Large Heat Sink
I
DP
①
300μs Pulse Drain Current Tested T
C
=25°C 280 A
I
D
②
Continuous Drain Current(V
GS
=10V)
T
C
=25°C 70
A
T
C
=100°C 49
P
D
Maximum Power Dissipation
T
C
=25°C 71
W
T
C
=100°C
36
R
q
JC
Thermal Resistance-Junction to Case 2.1 °C/W
R
q
JA
Thermal Resistance-Junction to Ambient 100 °C/W
Drain-Source Avalanche Ratings
E
AS
③
Avalanche Energy, Single Pulsed 196 mJ
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2015
1 www.ruichips.com
G
S
D
D
S
G
RU3070L
Electrical Characteristics (T
C
=25°C Unless Otherwise Noted)
Symbol Parameter Test Condition
RU3070L
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250µA 30 V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=30V, V
GS
=0V 1
µA
T
J
=125°C 30
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250µA
1 3 V
I
GSS
Gate Leakage Current V
GS
=±20V, V
DS
=0V ±100 nA
R
DS(ON)
④
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=70A 3 4 mΩ
V
GS
=4.5V, I
DS
=56A 4.5 6 mΩ
Diode Characteristics
V
SD
④
Diode Forward Voltage
I
SD
=70A, V
GS
=0V
1.2 V
trr
Reverse Recovery Time
ISD=70A, dlSD/dt=100A/µs
35 ns
Qrr
Reverse Recovery Charge 23 nC
Dynamic Characteristics
⑤
R
G
Gate Resistance V
GS
=0V,V
DS
=0V,F=1MHz 1.9 Ω
C
iss
Input Capacitance
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
2200
pF
C
oss
Output Capacitance 370
C
rss
Reverse Transfer Capacitance 250
t
d(ON)
Turn-on Delay Time
V
DD
=15V, I
DS
=70A,
V
GEN
=10V, R
G
=5Ω
7
ns
t
r
Turn-on Rise Time 12
t
d(OFF)
Turn-off Delay Time 28
t
f
Turn-off Fall Time 11
Gate Charge Characteristics
⑤
Q
g
Total Gate Charge
V
DS
=24V, V
GS
=10V,
I
DS
=70A
32
nCQ
gs
Gate-Source Charge 5
Q
gd
Gate-Drain Charge 10
Notes:
①
Pulse width limited by safe operating area.
②
Calculated continuous current based on maximum allowable junction temperature.
③
Limited by T
Jmax
, I
AS
=28A, V
DD
= 24V, R
G
= 50Ω , Starting T
J
= 25°C.
④
Pulse test;Pulse width
≤
300µs, duty cycle
≤
2%.
⑤
Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2015
2 www.ruichips.com