BAS16GW
High-speed switching diode
23 November 2016 Product data sheet
1. General description
High-speed switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD)
plastic package.
2. Features and benefits
• High switching speed: t
rr
≤ 4 ns
• Low leakage current
• Reverse voltage V
R
≤ 100 V
• Low capacitance: C
d
≤ 1.5 pF
• Small SMD plastic package
• AEC-Q101 qualified
3. Applications
• High-speed switching at high voltage
• General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
R
reverse voltage T
j
= 25 °C - - 100 V
I
R
reverse current V
R
= 80 V; pulsed; T
j
= 25 °C - - 0.5 µA
t
rr
reverse recovery time I
F
= 10 mA; I
R
= 10 mA; R
L
= 100 Ω;
I
R(meas)
= 1 mA; Switched from I
F
= 10
mA to I
R
= 10 mA; T
j
= 25 °C
- - 4 ns