BAS16GW
High-speed switching diode
23 November 2016 Product data sheet
1. General description
High-speed switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD)
plastic package.
2. Features and benefits
High switching speed: t
rr
≤ 4 ns
Low leakage current
Reverse voltage V
R
≤ 100 V
Low capacitance: C
d
≤ 1.5 pF
Small SMD plastic package
AEC-Q101 qualified
3. Applications
High-speed switching at high voltage
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
R
reverse voltage T
j
= 25 °C - - 100 V
I
R
reverse current V
R
= 80 V; pulsed; T
j
= 25 °C - - 0.5 µA
t
rr
reverse recovery time I
F
= 10 mA; I
R
= 10 mA; R
L
= 100 Ω;
I
R(meas)
= 1 mA; Switched from I
F
= 10
mA to I
R
= 10 mA; T
j
= 25 °C
- - 4 ns
©
Nexperia B.V. 2017. All rights reserved
Nexperia
BAS16GW
High-speed switching diode
BAS16GW All information provided in this document is subject to legal disclaimers.
Product data sheet 23 November 2016 2 / 12
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K Cathode
2 A Anode
21
SOD123
sym001
1 2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BAS16GW SOD123 Plastic surface-mounted package; 2 leads SOD123
7. Marking
Table 4. Marking codes
Type number Marking code
BAS16GW GA