PA50 • PA50A
2 PA50U
PA50 PA50A
PARAMETER TEST CONDITIONS
1
MIN TYP MAX MIN TYP MAX UNITS
INPUT
OFFSET VOLTAGE, initial 5 10 2 5 mV
OFFSET VOLTAGE, vs. temperature Full temperature range 20 50 * * µV/°V
OFFSET VOLTAGE, vs. supply 10 30 * * µV/V
BIAS CURRENT, initial 10 50 * * pA
BIAS CURRENT vs. supply 0.01 * pA/V
OFFSET CURRENT, initial 10 50 * * pA
INPUT IMPEDANCE, DC 10 * Ω
INPUT CAPACITANCE 13 * pF
COMMON MODE VOLTAGE RANGE Full temperature range -V
B
+12
+V
B
-14 * V
COMMON MODE REJECTION,DC Full temp, range, V
CM
= ±20V 90 100 * * dB
INPUT NOISE 100 kHZ BW, Rs=1 kΩ 10 * µVrms
GAIN
OPEN LOOP,@ 15 Hz Full temperature range 94 102 * * dB
GAIN BANDWIDTH PRODUCT R
L
=10 Ω 3 * MHz
POWER BANDWIDTH R
L
=4 Ω, V
o
= 80V
P-P
, Av = -10 200 * kHz
Full temperature range
OUTPUT
VOLTAGE SWING I
o
= 40A ±V
S
±9.5 ±V
S
±8.0 * * V
VOLTAGE SWING, PA50 ±V
BOOST
=±V
S
±10V, I
o
=40A ±V
S
±5.8 ±V
S
±4.0 V
VOLTAGE SWING, PA50A ±V
BOOST
=±V
S
±10V, I
o
=50A ±V
S
±5.8 ±V
S
±5.0 V
CURRENT, peak 3ms 10% Duty Cycle 100 * A
SETTLING TIME TO 0.1% A
V
= -10,10V STEP,R
L
=4 Ω 1 * µs
SLEW RATE A
V
=-10 50 * V/µs
RESISTANCE I
O
=0, NO LOAD, 2 MHZ 2.5 * Ω
POWER SUPPLY
VOLTAGE, ±V
BOOST
Full temperature range +14, -12 ±15 ±65 * * * V
VOLTAGE, ±V
S
Full temperature range ±3 ±50 * * V
CURRENT,quiescent, boost supply 26 32 * * mA
CURRENT, quiescent, total 30 36 * * mA
THERMAL
RESISTANCE,AC,junction to case
3
Full temperature range, F>60 HZ 0.2 0.25 * * °C/W
RESISTANCE,DC,junction to case Full temperature range, F>60 HZ 0.25 0.31 * * °C/W
RESISTANCE, junction to air Full temperature range 12 * °C/W
TEMPERATURE RANGE, case Meets full range specication -25 85 * * °C
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V
S
to –V
S
100V
BOOST VOLTAGE, +V
b
to -V
b
130V
OUTPUT CURRENT, within SOA 100A
POWER DISSIPATION, internal 400W
INPUT VOLTAGE, differential ±20V
INPUT VOLTAGE, common mode ±V
b
TEMPERATURE, pin solder - 10s 350°C
TEMPERATURE, junction
2
150°C
TEMPERATURE, storage –65 to +150°C
OPERATING TEMPERATURE RANGE, case –55 to +125°C
SPECIFICATIONS
NOTES: * The specication of PA50A is identical to the specication for PA50 in applicable column to the left
1. Unless otherwise noted: T
C
= 25°C, DC input specications are ± value given. Power supply voltage is typical rating.
±V
BOOST
= ±V
S
.
2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF. For guidance, refer to the heatsink data sheet.
3. Rating applies if the output current alternates between both output transistors at a rate faster than 60 Hz.
The PA50 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
CAUTION