© Semiconductor Components Industries, LLC, 2011
May, 2019 − Rev. 2
1 Publication Order Number:
NTA4001N/D
NTA4001N, NVA4001N
MOSFET – Single,
N-Channel, Gate ESD
Protection, Small Signal,
SC-75
20 V, 238 mA
Features
• Low Gate Charge for Fast Switching
• Small 1.6 x 1.6 mm Footprint
• ESD Protected Gate
• AEC−Q101 Qualified and PPAP Capable − NVA4001N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Management Load Switch
• Level Shift
• Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±10 V
Continuous Drain
Current (Note 1)
Steady State = 25°C I
D
238 mA
Power Dissipation
(Note 1)
Steady State = 25°C P
D
300 mW
Pulsed Drain Current
t
P
v 10 ms
I
DM
714 mA
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Continuous Source Current (Body Diode) I
SD
238 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
416 °C/W
1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).
2.2 W @ 2.5 V
http://onsemi.com
R
DS(on)
Typ @ V
GS
I
D
MAX
(Note 1)
V
(BR)DSS
1.5 W @ 4.5 V
20 V 238 mA
(Top View)
SC−75 / SOT−416
CASE 463
STYLE 5
2
1
SC−75 (3−Leads)
Drain
Gate
3
1
2
Source
3
1
3
2
N−Channel
MARKING DIAGRAM
TF = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
TF MG
G
1
3
2
PIN CONNECTIONS
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
NTA4001N, NVA4001N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 mA
20 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 20 V 1.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±10 V ±100
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
DS
= 3 V, I
D
= 100 mA
0.5 1.0 1.5 V
Drain−to−Source On Resistance R
DS(on)
V
GS
= 4.5 V, I
D
= 10 mA 1.5 3.0
W
V
GS
= 2.5 V, I
D
= 10 mA 2.2 3.5
Forward Transconductance g
FS
V
DS
= 3 V, I
D
= 10 mA 80 mS
CAPACITANCES
Input Capacitance
C
ISS
V
DS
= 5 V, f = 1 MHz,
V
GS
= 0 V
11.5 20
pF
Output Capacitance C
OSS
10 15
Reverse Transfer Capacitance C
RSS
3.5 6.0
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 5 V,
I
D
= 10 mA, R
G
= 10 W
13 ns
Rise Time t
r
15
ns
Turn−Off Delay Time t
d(OFF)
98
Fall Time t
f
60
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 10 mA 0.66 0.8 V
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.