© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 3
Publication Order Number:
NSR1020MW2/D
NSR1020MW2
2
0V SOD-323 Schottky
Barrier Diode
This Schottky Barrier Diode in the SOD−323 package offers
extremely low Vf performance. The low forward voltage makes them
capable of handling high current in a very small package. The
resulting device is ideally suited for application as a blocking diode in
charging applications or as part of discrete buck converter or discrete
boost converter. As part of a buck conversion circuit, a boost
conversion circuit or a charging circuit the low Vf drop of the Schottky
improves the efficiency of the overall device by consuming less power
in the forward mode.
Features
• Low Forward Voltage − 0.24 Volts (Typ) @ I
F
= 10 mAdc
• High Current Capability
• ESD Rating − Human Body Model: CLASS 3B
− Machine Model: C
• NSVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
20 Vdc
Peak Revese Voltage V
RM
30 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
200
2.0
mW
mW/°C
Forward Current (DC)
Continuous
I
F
1
A
Forward Current
t = 8.3 ms Half Sinewave
I
F
5
A
Repetitive Forward Current
period = 1.5 s, Duty Cycle = 66.7%
I
FRM
2
A
Junction Temperature T
J
125 Max °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
RE
= Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
HIGH CURRENT
SCHOTTKY BARRIER DIODE
1
CATHODE
2
ANODE
Device Package Shipping†
ORDERING INFORMATION
SOD−323
CASE 477
STYLE 1
www.onsemi.com
M
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSR1020MW2T1G SOD−323
(Pb−Free)
3000 / Tape &
Reel
NSR1020MW2T3G SOD−323
(Pb−Free)
10,000 / Tape &
Reel
1
2
RE MG
G
NSVR1020MW2T1G SOD−323
(Pb−Free)
3000 / Tape &
Reel
NSR1020MW2
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Total Capacitance (V
R
= 5.0 V, f = 1.0 MHz) C
T
− 25 29 pF
Reverse Leakage (V
R
= 15 V) I
R
− − 40
mAdc
Forward Voltage (I
F
= 1 mAdc) V
F
− − 0.20 Vdc
Forward Voltage (I
F
= 10 mAdc) V
F
− − 0.26 Vdc
Forward Voltage (I
F
= 100 mAdc) V
F
− − 0.33 Vdc
Forward Voltage (I
F
= 500 mAdc) V
F
− − 0.44 Vdc
Forward Voltage (I
F
= 1000 mAdc) V
F
− − 0.54 Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1
10
100
1000
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (mA)
Figure 1. Forward Voltage
1
10
100
1000
10000
0 5 10 15 20 25
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
IR, REVERSE CURRENT (mA)
150°C
85°C
−45°C
−55°C
25°C
150°C
85°C
25°C
125°C
0
20
40
60
80
100
120
140
0 5 10 15 20
VR, REVERSE VOLTAGE (V)
CT, CAPACITANCE (pF)
Figure 3. Total Capacitance