Mar. 7, 2021 © 2017 Transphorm Inc. Subject to change without notice.
tp90h180ps.1 1
TP90H180PS
Discontinued
900V GaN FET in TO-220 (source tab)
Description
The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET
is a normally-off device. It combines state-of-the-art high
voltage GaN HEMT and low voltage silicon MOSFET
technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon,
through lower gate charge, lower crossover loss, and smaller
reverse recovery charge.
Related Literature
• AN0009: Recommended External Circuitry for GaN FETs
• AN0003: Printed Circuit Board Layout and Probing
• AN0010: Paralleling GaN FETs
Ordering Information
Part Number Package
Package
Configuration
TP90H180PS 3 lead TO-220 Source
S
G
D
S
TP90H180PS
TO-220
(top view)
Features
• JEDEC qualified GaN technology
• Dynamic R
DS(on)eff
production tested
• Robust design, defined by
— Intrinsic lifetime tests
— Wide gate safety margin
— Transient over-voltage capability
• Very low Q
RR
• Reduced crossover loss
• RoHS compliant and Halogen-free packaging
Benefits
• Enables AC-DC bridgeless totem-pole PFC designs
— Increased power density
— Reduced system size and weight
— Overall lower system cost
• Achieves increased efficiency in both hard- and soft-
switched circuits
• Easy to drive with commonly-used gate drivers
• GSD pin layout improves high speed design
Applications
• Datacom
• Broad industrial
• PV inverter
• Servo motor
Key Specifications
V
DSS
(V) 900
V
(TR)DSS
(V) 1000
R
DS(on)eff
(mΩ) max* 205
Q
RR
(nC) typ 49
Q
G
(nC) typ 10
* Dynamic on-resistance; see Figures 19 and 20
Cascode Device Structure Cascode Schematic Symbol
Mar. 7, 2021 transphormusa.com
tp90h180ps.1 2
TP90H180PS (Discontinued)
Thermal Resistance
Symbol Parameter Typical Unit
R
ΘJC
Junction-to-case 1.6 °C/W
R
ΘJA
Junction-to-ambient 62 °C/W
Absolute Maximum Ratings (T
c
=25°C unless otherwise stated.)
Symbol Parameter Limit Value Unit
V
DSS
Drain to source voltage (T
J
= -55°C to 150°C) 900
V V
(TR)DSS
Transient drain to source voltage
a
1000
V
GSS
Gate to source voltage ±18
P
D
Maximum power dissipation @T
C
=25°C 78 W
I
D
Continuous drain current @T
C
=25°C
b
15 A
Continuous drain current @T
C
=100°C
b
10 A
I
DM
Pulsed drain current (pulse width: 10µs) 58 A
(di/dt)
RDMC
Reverse diode di/dt, repetitive
c
1200 A/µs
(di/dt)
RDMT
Reverse diode di/dt, transient
d
2400 A/µs
T
C
Operating temperature
Case -55 to +150 °C
T
J
Junction -55 to +150 °C
T
S
Storage temperature -55 to +150 °C
T
SOLD
Soldering peak temperature
e
260 °C
Notes:
a. In off-state, spike duty cycle D<0.01, spike duration <1µs
b. For increased stability at high current operation, see Circuit Implementation on page 3
c. Continuous switching operation
d. ≤300 pulses per second for a total duration ≤20 minutes
e. For 10 sec., 1.6mm from the case