Toshiba Semiconductor New Product News
Industry-leading
*1
low On-resistance
Small SOT-23F package and highly allowable power
dissipation rating (2.4×2.9 mm, P
D
=1.0 W
*2
)
Expanded lineup of 20 V products with low On-resistance using the SOT-23F package
20 V small size low On-resistance MOSFETs
Toshiba has launched four small size 20 V MOSFETs with low On-resistance: “SSM3K344R”, “SSM3K345R”,
“SSM3J355R” and “SSM3J358R”, expanding its product lineup.
By adopting the latest process with a low voltage trench structure, the new 20 V products feature industry
-leading
*1
low On-resistance, using the SOT-23F package.
The new products are suitable for lowering power consumption in the power supply control for individual
function blocks or power supply distribution.
Applications
External View
Features
Outline Drawing
Mobile devices
(tablet PC, laptop PC, DSC and DVC, etc.)
Consumer equipment
Industrial equipment
SSM3K344R, SSM3K345R, SSM3J355R, SSM3J358R
Unit: mm
SOT-23F
SOT-23F
*1: Comparison with the product of the same maximum rating, according to a survey by Toshiba
(as of December 2016).
*2: Device mounted on a 25.4×25.4×1.6 mm FR-4 glass epoxy board (Cu pad: 645 mm
2
)
DSC/DVC
Tablet PCs
BOTTOM VIEW
+0.08
0.8-0.05
3
(0.1)
+0.08
0.17-0.07
A
2.9±0.2
2.4±0.1
1.8±0.1
+0.08
0.42-0.05
12
0.95 0.95
0.1
A
M
1. Gate
2. Source
3. Drain
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for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption.
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information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and
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APPLICATIONS.
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APPLICABLE LAWS AND REGULATIONS.
Main Specifications
Circuit Example
https://toshiba.semicon-storage.com/
(
@T
a
=25˚C
)
SSM3K344R
SSM3K345R
SSM3J355R
SSM3J358R
Part number
SOT-23F
Package
Absolute Maximum Ratings Electrical Characteristics
N-ch
N-ch
P-ch
P-ch
Polarity
153
410
1030
1331
Input
capacitance
C
iss
typ.
(pF)
20
20
-20
-20
Drain-source
voltage
V
DSS
(V)
±8
±8
±10
±10
Gate-source
voltage
V
GSS
(V)
3
4
-6
-6
Drain current
I
D
(A)
1
1
1
1
Power
dissipation
P
D
*2
(W)
51.0
25.0
23.0
19.3
Drain-source
On-resistance
R
DS(ON)
typ.
(mΩ)
@
I
V
GS
I
=4.5 V
81.0
40.0
36.0
28.8
Drain-source
On-resistance
R
DS(ON)
typ.
(mΩ)
@
I
V
GS
I
=1.8 V
P-ch load switch
N-ch load switch
Supply in Output
Control
signal
input
Supply in Output
Control
signal
input
+Vgate