Vishay Siliconix
Si7230DN
Document Number: 74396
S-83052-Rev. B, 29-Dec-08
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• PWM Optimized
• 100 % R
g
Tested
APPLICATIONS
• DC/DC Converters
- Secondary Synchronous Rectifier
- High-Side MOSFET in Synchronous Buck
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.012 at V
GS
= 10 V
14
0.016 at V
GS
= 4.5 V
12
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerP A K 1212-8
Bottom V i e w
Ordering Information: Si7230DN-T1-E3 (Lead (Pb)-free)
Si7230DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
14 9
A
T
A
= 70 °C
11 7.5
Pulsed Drain Current
I
DM
40
Continuous Source Current (Diode Conduction)
a
I
S
3.2 1.3
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
14
Avalanche Energy
E
AS
9.8 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.7 1.5
W
T
A
= 70 °C
2.3 1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
28 34
°C/W
Steady State 66 81
Maximum Junction-to-Case (Drain) Steady State
R
thJC
2.0 2.4
www.vishay.com
2
Document Number: 74396
S-83052-Rev. B, 29-Dec-08
Vishay Siliconix
Si7230DN
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
MOSFET SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.0 3.0 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
5
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 14 A
0.009 0.012
Ω
V
GS
= 4.5 V, I
D
= 12 A
0.013 0.016
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 14 A
32 S
Diode Forward Voltage
a
V
SD
I
S
= 3.2 A, V
GS
= 0 V
0.8 1.1 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 5 V, I
D
= 14 A
13.2 20
nCGate-Source Charge
Q
gs
5.3
Gate-Drain Charge
Q
gd
4.3
Gate Resistance
R
g
0.9 1.8 2.7 Ω
Turn-O n D el ay T im e
t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
13 20
ns
Rise Time
t
r
10 15
Turn-Off Delay Time
t
d(off)
33 50
Fall Time
t
f
10 15
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.3 A, dI/dt = 100 A/µs
25 40
Output Characteristics
0
5
10
15
20
25
30
35
40
012345
V
GS
= 10 thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
3 V
Transfer Characteristics
0
5
10
15
20
25
30
35
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 125 °C
25 °C
- 55 °C