HCS8050(NPN)
R
EPLACEMENT TYPE : S8050
FEATUR
ES
N
PN Silicon E pitaxial Planar Transistor
For switching and amplifier applications.
Complimentary to HCS8550(PNP)
M
AXIMUM RATINGS (T
A
=25°
C unless otherwise noted)
ELECTRICAL CHARACTE RISTICS (T
A
=25°C
unless otherwise noted)
Parameter Symbol Test conditions Min Typ Max Unit
C
ollector-Base Breakdown Voltage V
CB
O
I
C
=
100μA, I
E
=0
40 V
C
ollector-Emitter Breakdown Voltage V
CE
O
I
C
=100μA, I
B
=0
25 V
Emi
tter-Base Breakdown Voltage V
EBO
I
E
=
100μA , I
C
=0
5 V
C
ollector Cut-off Current I
CB
O
V
CB
=40V ,
I
E
=0
0.
1 μA
Emi
tter Cut-off Current I
EBO
V
EB
=5V
, I
C
=0
0.
1 μA
DC Cur
rent Gain
h
F
E(1)
V
CE
=1V ,
I
C
=50mA
85 400
h
FE
(2)
V
CE
=1V ,
I
C
=500mA
50
C
ollector-Emitter Saturation Voltage V
C
E(sat)
I
C
=500
mA , I
B
=50mA
0.
6 V
Ba
se-Emitter Saturation Voltage V
BE(
sat)
I
C
=500m
A , I
B
=50mA
1.
2 V
T
ransition Frequency f
T
V
CE
=6V ,
I
C
=20m
A f=30MHz
150 MHz
*P
ulse test: pulse width ≤300μs, duty cycle≤ 2.0%
CLASSIFICATION OF h
FE
R
ank
B
C
D E
Range
80-1
60
120-200
160-300 300-400
Par
ameter Symbol Value Unit
C
ollector-Base Voltage V
CB
O
40 V
C
ollector-Emi tter Voltage V
CE
O
25 V
Emi
tter-Base Voltage V
EBO
5 V
C
ollector Current-Continuous I
C
500 mA
C
ollector Power Dissipation P
C
625 mW
J
unction Temperature T
J
150 °C
S
torage Temperature T
st
g
-55 t
o +150 °C
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
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GENERAL PURPOSE TRANSISTOR
