S8050
1 / 4
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
BIPOLAR TRANSISTOR (NPN)
FEATURES
Complementary to S8550
Excellent h
FE
Linearity
High Collector Current
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Parameter
Value
Unit
Collector-Base Voltage
40
V
Collector-Emitter Voltage
25
V
Emitter-Base Voltage
5
V
Collector Current
500
mA
Collector Power Dissipation
300
mW
Thermal Resistance From Junction To Ambient
417
°C/W
Junction Temperature
150
°C
Storage Temperature
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Collector-base breakdown voltage
V(BR)CBO
40
V
I
C
=100uA，I
E
=0
Collector-emitter breakdown voltage
V(BR)CEO
25
V
I
C
=1mA，I
B
=0
Emitter-base breakdown voltage
V(BR)EBO
5
V
I
E
=100uA，I
C
=0
Collector cut-off current
I
CBO
0.1
uA
V
CB
=40V, I
E
=0
Collector cut-off current
I
CEO
0.1
uA
V
CE
=20V, I
B
=0
Emitter cut-off current
I
EBO
0.1
uA
V
EB
=5V, I
C
=0
DC current gain
h
FE1
120
400
V
CE
=1V, I
C
=50mA
h
FE2
50
V
CE
=1V, I
C
=500mA
Collector-emitter saturation voltage
V
CE(sat)
0.6
V
I
C
=500mA，I
B
=50mA
Base-emitter saturation voltage
V
BE(sat)
1.2
V
I
C
=500mA
，
I
B
=50mA
Transition frequency
f
T
150
MHz
V
CE
=6V, I
C
=20mA, f=30
MHz
CLASSIFICATION OF h
FE
Rank
L
H
J
Range
120-200
200-350
300-400
Marking
J3Y
S8050
2
/ 4
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt
@
heketai.com
BIPOLAR TRANSISTOR (NPN)
Typical Characteristics
1 10 100
10
100
1000
1 10 100
10
100
0.1 1 10
1
100
10
0 25 50 75 100 125 150
0
100
200
300
400
0.2 0.4 0.6 0.8 1.0
0.1
1
10
100
1 10 100
0.0
0.4
0.8
1.2
048121620
0
20
40
60
80
100
f
T
—— I
C
h
FE
——
COMMON EMITTER
V
CE
=1V
3
30
500
T
a
=100
℃
T
a
=25
℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(mA)
I
C
30
300
303
COLLECTOR-EMITTER SATURATION
VOLTAG
E V
CEsa
t
(mV)
COLLECTOR CURRENT I
C
(mA)
β=10
T
a
=25
℃
T
a
=100
℃
I
C
V
CEsat
——
500
500
100
30
10
3
3
0.3
20
C
ob
C
ib
REVERSE VOLTAG
E V (V)
f=1MHz
I
E
=0/ I
C
=0
T
a
=25
℃
V
CB
/ V
EB
C
ob
/ C
ib
——
CAPACITANCE C (p
F)
10
1000
100
30
V
CE
=6V
T
a
=25
℃
TRANSI
TION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
CO
LLECTOR POWER DISSIPATION
P
C
(mW)
AMBIENT T
EMPERATURE T
a
( )
℃
P
C
—— T
a
500
V
BE
I
C
——
30
3
0.3
T
a
=25
℃
T
a
=100
℃
COMMO
N EMITTER
V
CE
=1V
COLLECTOR CURRENT I
C
(mA)
BASE-EMM
ITER VOLTAGE V
BE
(V)
30
3
β=10
BASE-EMITT
ER SATURATION
VOLTAGE V
BEs
at
(V)
COLLECTOR CURRENT I
C
(mA)
T
a
=25
℃
T
a
=100
℃
500
I
C
V
BEsat
——
St
atic Characteristic
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EM
ITTER VOLTAGE V
CE
(V)
400uA
350uA
300uA
250uA
200uA
150uA
100uA
I
B
=50uA
C
OMMON
EMITTER
T
a
=25
℃