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Vishay Dale Thin Film
Revision: 20-Oct-11
1
Document Number: 60013
For technical questions, contact: thinfilm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hermetic, 50 mil Pitch, Leadless Thin Film Chip Resistor,
Surface Mount Network
Vishay Dale Thin film offers a four terminal hermetic leadless
chip carrier package with precision matched pair elements.
The network features tight ratio tolerance and close tracking
over a 100 to 100 k resistance range. For custom
schematics and values contact applications engineering.
FEATURES
• True hermetic construction
• Exceptional stability and performance
characteristics ratio stability (R ± 0.015 % at
70 °C for 2000 h)
• Nickel barrier terminations
• Military/aerospace
• Hermetically sealed
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
TYPICAL PERFORMANCE
SCHEMATIC
ABSOLUTE TRACKING
TCR 25 5
ABSOLUTE RATIO
TOL. 0.1 0.05
STANDARD ELECTRICAL SPECIFICATIONS
TEST SPECIFICATIONS CONDITIONS
Material Passivated nichrome -
Pin/Lead Number 4-
Resistance Range 100 to 100 k -
TCR: Absolute ± 25 ppm/°C (standard) - 55 °C to + 125 °C
TCR: Tracking ± 2 ppm/°C (typical < 1 ppm /°C equal values) - 55 °C to + 125 °C
Tolerance: Absolute ± 0.1 % to ± 1.0 % + 25 °C
Tolerance: Ratio ± 0.05 % to ± 0.1 % + 25 °C
Power Rating: Resistor 250 mW (per element) Maximum at + 70 °C
Power Rating: Package 1000 mW Maximum at + 70 °C
Stability: Absolute R ± 0.05 % 2000 h at + 70 °C
Stability: Ratio R ± 0.015 % 2000 h at + 70 °C
Voltage Coefficient < 0.1 ppm/V -
Working Voltage 100 V max. not to exceed -
Operating Temperature Range - 55 °C to + 125 °C -
Storage Temperature Range - 55 °C to + 150 °C -
Noise < - 30 dB -
Thermal EMF 0.08 μV/°C -
Shelf Life Stability: Absolute R ± 0.01 % 1 year at + 25 °C
Shelf Life Stability: Ratio R ± 0.002 % 1 year at + 25 °C