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For the Excellence in System Design
SiC Schottky Barrier Diode
Features
• Low conduc�on loss
• Zero reverse recovery
• Temperature independent switching
• High surge current capability
• High ruggedness
• High junc�on temperature 175
o
C
Target Application
• PV Inverter
• ESS / BMS
• Server Power
• Telecom Power
• PC Power
• EV Charging Pile
• UPS
• Industrial Motor
• Home Appliance
• Digital TV
Green EnergyPower System Industrial Consumer
Top Metal
P+
N- Epi Layer
Buffer Layer
Back Metal
N+ SiC Substrate
Ohmic contact
Headquarters
TEL FAX
MAIL
SiC SBD Line-Up
Performance
Temperature coefficient
SiC Diode 650V / 10A
SiC Diode 650V / 10A
800W CCM Boost PFC, Vin = 110Vac/60Hz, Vout = 400V, Fsw = 65kHz
System Evaluation:
Boost Pre- charge diode
Boost diode
DUT
Load
NTC
V
F
Temperature Variation [%]
(25c to 125c)
Forward Current, I
F
[A]
PTC
Forward Current, I
F
[A]
Forward Voltage, V
F
[V]
Output Power, P
OUT
[W]
System Efficiency, η [%]
Series
BV
(V)
650
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
6
13
19
27
34
48
63
13
27
37
59
78
PCDP0465G1
PCDP0665G1
PCDP0865G1
PCDP1065G1
PCDP1265G1
PCDP1665G1
PCDP2065G1
PCDP05120G1
PCDP08120G1
PCDP10120G1
PCDP15120G1
PCDP20120G1
PCDB0465G1
PCDB0665G1
PCDB0865G1
PCDB1065G1
PCDB10120G1
PCDB20120G1
1200
TO-220AC TO-263
I
f
(A)
V
f Typ.
(V)
C
J
(pF)
SiC Diode
650V
SiC Diode
1200V
4
6
8
10
12
16
20
5
8
10
15
20